Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany.
Nanotechnology. 2018 Sep 28;29(39):395705. doi: 10.1088/1361-6528/aad21b. Epub 2018 Jul 9.
This work focuses on homoepitaxial growth of β-GaO on (100)-oriented substrates during molecular beam epitaxy. It provides a comprehensive study on the growth mode by combining in situ with ex situ tools. In situ reflection high-energy electron diffraction (RHEED) indicates 2D layer-by-layer mode accompanied by (1 × 1) surface reconstruction. The homoepitaxial layers are grown pseudomorphic with the substrate without in-plane strain as probed by in-plane azimuthal RHEED and out-of-plane synchrotron-based high resolution x-ray diffraction. In contrast to the substrate, stacking faults and twin domains are present in the layer.
这项工作专注于分子束外延过程中β-GaO 在（100）取向衬底上的同质外延生长。通过原位和非原位工具的结合，对生长模式进行了全面研究。原位反射高能电子衍射（RHEED）表明二维层状生长模式伴随着（1×1）表面重构。同质外延层与衬底完全共形生长，没有平面应变，这可以通过平面方位 RHEED 和基于同步辐射的高分辨率 x 射线衍射来探测。与衬底不同的是，层中存在堆垛层错和孪晶畴。
