Zhao Feiyang, He Yongjie, Huang Bin, Zhang Tianyi, Zhu Hao
School of Microelectronics, Fudan University, Shanghai 200433, China.
National Integrated Circuit Innovation Center, Shanghai 201203, China.
Materials (Basel). 2024 Jul 11;17(14):3437. doi: 10.3390/ma17143437.
Diamond is known as the ultimate semiconductor material for electric devices with excellent properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility 4000 cm/V·s, hole mobility 3800 cm/V·s), high critical breakdown electric field (20 MV/cm), and high thermal conductivity (22 W/cm·K), showing good prospects in high-power applications. The lack of n-type diamonds limits the development of bipolar devices; most of the research focuses on p-type Schottky barrier diodes (SBDs) and unipolar field-effect transistors (FETs) based on terminal technology. In recent years, breakthroughs have been made through the introduction of new structures, dielectric materials, heterogeneous epitaxy, etc. Currently, diamond devices have shown promising applications in high-power applications, with a BV of 10 kV, a BFOM of 874.6 MW/cm, and a current density of 60 kA/cm already realized. This review summarizes the research progress of diamond materials, devices, and specific applications, with a particular focus on the development of SBDs and FETs and their use in high-power applications, aiming to provide researchers with the relevant intuitive parametric comparisons. Finally, the paper provides an outlook on the parameters and development directions of diamond power devices.
金刚石被认为是用于电子器件的终极半导体材料，具有诸如超宽带隙（5.47电子伏特）、高载流子迁移率（电子迁移率4000厘米²/伏·秒，空穴迁移率3800厘米²/伏·秒）、高临界击穿电场（20兆伏/厘米）和高导热率（22瓦/厘米·开尔文）等优异性能，在高功率应用中显示出良好前景。缺乏n型金刚石限制了双极器件的发展；大多数研究集中在基于终端技术的p型肖特基势垒二极管（SBD）和单极场效应晶体管（FET）上。近年来，通过引入新结构、介电材料、异质外延等取得了突破。目前，金刚石器件在高功率应用中已显示出有前景的应用，已经实现了10千伏的击穿电压（BV）、874.6兆瓦/厘米的优值（BFOM）和60千安/厘米的电流密度。本综述总结了金刚石材料、器件及具体应用的研究进展，特别关注SBD和FET的发展及其在高功率应用中的使用，旨在为研究人员提供相关直观的参数比较。最后，本文对金刚石功率器件的参数和发展方向进行了展望。
