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共振半导体纳米天线阵列中的定向激光发射

Directional lasing in resonant semiconductor nanoantenna arrays.

作者信息

Ha Son Tung, Fu Yuan Hsing, Emani Naresh Kumar, Pan Zhenying, Bakker Reuben M, Paniagua-Domínguez Ramón, Kuznetsov Arseniy I

机构信息

Data Storage Institute, Agency for Science, Technology and Research, Singapore, Singapore.

Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore, Singapore.

出版信息

Nat Nanotechnol. 2018 Nov;13(11):1042-1047. doi: 10.1038/s41565-018-0245-5. Epub 2018 Aug 20.

DOI:10.1038/s41565-018-0245-5
PMID:30127475
Abstract

High-index dielectric and semiconductor nanoparticles supporting strong electric and magnetic resonances have drawn significant attention in recent years. However, until now, there have been no experimental reports of lasing action from such nanostructures. Here, we demonstrate directional lasing, with a low threshold and high quality factor, in active dielectric nanoantenna arrays achieved through a leaky resonance excited in coupled gallium arsenide (GaAs) nanopillars. The leaky resonance is formed by partially breaking a bound state in the continuum generated by the collective, vertical electric dipole resonances excited in the nanopillars for subdiffractive arrays. We control the directionality of the emitted light while maintaining a high quality factor (Q = 2,750). The lasing directivity and wavelength can be tuned via the nanoantenna array geometry and by modifying the gain spectrum of GaAs with temperature. The obtained results provide guidelines for achieving surface-emitting laser devices based on active dielectric nanoantennas that are compact and highly transparent.

摘要

近年来,支持强电谐振和磁共振的高折射率介电和半导体纳米颗粒引起了广泛关注。然而,到目前为止,尚无关于此类纳米结构产生激光作用的实验报道。在此,我们展示了通过耦合砷化镓(GaAs)纳米柱中激发的泄漏共振实现的有源介电纳米天线阵列中的定向激光发射,其具有低阈值和高品质因数。泄漏共振是通过部分打破纳米柱中为亚衍射阵列激发的集体垂直电偶极共振所产生的连续统中的束缚态而形成的。我们在保持高品质因数(Q = 2750)的同时控制发射光的方向性。激光发射的方向性和波长可以通过纳米天线阵列的几何形状以及通过改变温度下GaAs的增益谱来调节。所获得的结果为实现基于有源介电纳米天线的紧凑且高度透明的表面发射激光器件提供了指导。

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