Plasmonics and Perovskites Laboratory, Department of Materials Science and Engineering, Indian Institute of Technology Kanpur, Kanpur, UP 208016, India.
Nanotechnology. 2018 Dec 14;29(50):505702. doi: 10.1088/1361-6528/aae135. Epub 2018 Sep 13.
Graphene-based resistance random access memory devices (RRAMs) have shown promise as a suitable replacement for flash memories, owing to their fast switching speed, low programming voltage, better scalability and great reliability. Furthermore, recent research works have shown bi-layer RRAM devices exhibiting better performance along the same parameters, where titania is one of the most commonly used materials. In the present work, we have studied the resistance switching behavior in a bi-layer RRAM device structure of TiO with graphene oxide (GO) and reduced graphene oxide (rGO). Switching mechanism in these devices has been investigated by detailed experimental characterization in conjunction with a finite element modeling (FEM) simulation. A dual conical conductive filament has been used in the present work, based on the modeling of the electroforming process carried out by FEM. It has been demonstrated that for the GO/TiO based hybrid RRAM device structure, GO acts as an active filament formation layer, whereas in the rGO/TiO bi-layer structure, rGO acts as a mere electrode.
基于石墨烯的电阻式随机存取存储器（RRAM）因其快速的开关速度、低编程电压、更好的可扩展性和高可靠性，有望替代闪存。此外，最近的研究工作表明，具有相同参数的双层 RRAM 器件具有更好的性能，其中二氧化钛是最常用的材料之一。在本工作中，我们研究了具有氧化石墨烯（GO）和还原氧化石墨烯（rGO）的双层 RRAM 器件结构中的电阻开关行为。通过详细的实验表征和有限元建模（FEM）模拟研究了这些器件的开关机制。在本工作中，基于 FEM 进行的电成型过程建模，使用了双锥形导电丝。结果表明，对于基于 GO/TiO 的混合 RRAM 器件结构，GO 充当活性丝形成层，而在 rGO/TiO 双层结构中，rGO 仅充当电极。
