全单片 CMOS-MEMS 谐振器中的热机械噪声特性。

Thermomechanical Noise Characterization in Fully Monolithic CMOS-MEMS Resonators.

机构信息

System Electronic Group (Physics Department), Universitat de les Illes Balears, 07122 Palma (Balearic Islands), Spain.

出版信息

Sensors (Basel). 2018 Sep 16;18(9):3124. doi: 10.3390/s18093124.

DOI:10.3390/s18093124

PMID:30223610

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6164022/

Abstract

We analyzed experimentally the noise characteristics of fully integrated CMOS-MEMS resonators to determine the overall thermomechanical noise and its impact on the limit of detection at the system level. Measurements from four MEMS resonator geometries designed for ultrasensitive detection operating between 2-MHz and 8-MHz monolithically integrated with a low-noise CMOS capacitive readout circuit were analyzed and used to determine the resolution achieved in terms of displacement and capacitance variation. The CMOS-MEMS system provides unprecedented detection resolution of 11 yF·Hz equivalent to a minimum detectable displacement (MDD) of 13 m·Hz, enabling noise characterization that is experimentally demonstrated by thermomechanical noise detection and compared to theoretical model values.

摘要

我们通过实验分析了全集成 CMOS-MEMS 谐振器的噪声特性，以确定整体热机械噪声及其对系统级检测极限的影响。我们分析了四个专为超灵敏检测设计的 MEMS 谐振器几何形状的测量结果，这些谐振器工作频率在 2MHz 到 8MHz 之间，与低噪声 CMOS 电容读取电路单片集成。通过测量结果，我们确定了在位移和电容变化方面的实现分辨率。该 CMOS-MEMS 系统提供了前所未有的检测分辨率 11 yF·Hz，相当于最小可检测位移 (MDD) 的 13 m·Hz，能够进行噪声特性分析，通过热机械噪声检测进行实验验证，并与理论模型值进行比较。