采用互补金属氧化物半导体工艺制造和测试射频微机电系统开关

Manufacturing and Testing of Radio Frequency MEMS Switches Using the Complementary Metal Oxide Semiconductor Process.

作者信息

Tsai Zung-You, Shih Po-Jen, Tsai Yao-Chuan, Dai Ching-Liang

机构信息

Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan.

Department of Biomedical Engineering, National Taiwan University, Taipei 106, Taiwan.

出版信息

Sensors (Basel). 2021 Feb 17;21(4):1396. doi: 10.3390/s21041396.

DOI:10.3390/s21041396

PMID:33671232

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7922824/

Abstract

A radio frequency microelectromechanical system switch (MSS) manufactured by the complementary metal oxide semiconductor (CMOS) process is presented. The MSS is a capacitive shunt type. Structure for the MSS consists of coplanar waveguide (CPW) lines, a membrane, and springs. The membrane locates over the CPW lines. The surface of signal line for the CPW has a silicon dioxide dielectric layer. The fabrication of the MSS contains a CMOS process and a post-process. The MSS has a sacrificial oxide layer after the CMOS process. In the post-processing, a wet etching of buffer oxide etch (BOE) etchant is employed to etch the sacrificial oxide layer, so that the membrane is released. Actuation voltage for the MSS is simulated using the CoventorWare software. The springs have a low stiffness, so that the actuation voltage reduces. The measured results reveal that actuation voltage for the MSS is 10 V. Insertion loss for the MSS is 0.9 dB at 41 GHz and isolation for the MSS is 30 dB at 41 GHz.

摘要

本文介绍了一种采用互补金属氧化物半导体（CMOS）工艺制造的射频微机电系统开关（MSS）。该MSS为电容性并联型。MSS的结构由共面波导（CPW）线路、一个膜片和弹簧组成。膜片位于CPW线路上方。CPW信号线的表面有一层二氧化硅介电层。MSS的制造包括一个CMOS工艺和一个后处理工艺。在CMOS工艺之后，MSS有一个牺牲氧化层。在后处理中，采用缓冲氧化物蚀刻（BOE）蚀刻剂进行湿法蚀刻以蚀刻牺牲氧化层，从而释放膜片。使用CoventorWare软件对MSS的驱动电压进行了模拟。弹簧具有低刚度，因此驱动电压降低。测量结果表明，MSS的驱动电压为10V。MSS在41GHz时的插入损耗为0.9dB，在41GHz时的隔离度为30dB。