Parfenov Oleg E, Averyanov Dmitry V, Tokmachev Andrey M, Karateev Igor A, Taldenkov Alexander N, Kondratev Oleg A, Storchak Vyacheslav G
National Research Center "Kurchatov Institute" , Kurchatov Sq. 1 , Moscow 123182 , Russia.
ACS Appl Mater Interfaces. 2018 Oct 17;10(41):35589-35598. doi: 10.1021/acsami.8b10962. Epub 2018 Oct 8.
The mature silicon technological platform is actively explored for spintronic applications. Metal silicides are an integral part of the Si technology used as interconnects, gate electrodes, and diffusion barriers; their epitaxial integration with Si results in premier contacts. Recent studies highlight the exceptional role of electronic discontinuities at interfaces in the spin-dependent transport properties. Here, we report a new type of Hall conductivity driven by sharp interfaces of Eu silicide, an antiferromagnetic metal, sandwiched between two insulators - Si and SiO . Quasi-ballistic transport probes spin-orbit coupling at the interfaces, in particular, charge-spin interconversion. Transverse magnetic field results in anomalous Hall effect signals of an unusual line shape. The interplay between opposite-sign signals from the two interfaces allows efficient control over the magnitude and sign of the overall effect. Selective engineering of interfaces singles out a particular spin signal. The two-channel nature of the effect and its high tunability offer new functional possibilities for future spintronic devices.
人们正在积极探索成熟的硅技术平台在自旋电子学应用中的潜力。金属硅化物是硅技术中不可或缺的一部分，可用作互连、栅电极和扩散阻挡层；它们与硅的外延集成可实现优质的接触。近期研究强调了界面处电子不连续性在自旋相关输运特性中所起的特殊作用。在此，我们报告了一种新型霍尔电导率，它由夹在两个绝缘体——硅和二氧化硅之间的反铁磁金属铕硅化物的尖锐界面所驱动。准弹道输运探测了界面处的自旋 - 轨道耦合，特别是电荷 - 自旋相互转换。横向磁场会导致形状异常的反常霍尔效应信号。来自两个界面的相反符号信号之间的相互作用使得能够有效地控制整体效应的大小和符号。对界面进行选择性工程设计可分离出特定的自旋信号。这种效应的双通道特性及其高可调性为未来的自旋电子器件提供了新的功能可能性。
