立方碳化硅中的电信波段明亮室温单光子源。
Bright room temperature single photon source at telecom range in cubic silicon carbide.
机构信息
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
School of Materials Science and Engineering, Harbin institute of Technology, Harbin, 150001, China.
出版信息
Nat Commun. 2018 Oct 5;9(1):4106. doi: 10.1038/s41467-018-06605-3.
Single-photon emitters (SPEs) play an important role in a number of quantum information tasks such as quantum key distributions. In these protocols, telecom wavelength photons are desired due to their low transmission loss in optical fibers. In this paper, we present a study of bright single-photon emitters in cubic silicon carbide (3C-SiC) emitting in the telecom range. We find that these emitters are photostable and bright at room temperature with a count rate of ~ MHz. Altogether with the fact that SiC is a growth and fabrication-friendly material, our result may be relevant for future applications in quantum communication technology.
单光子发射器（SPEs）在许多量子信息任务中发挥着重要作用，例如量子密钥分发。在这些协议中，由于光纤中的传输损耗低，因此需要使用电信波长的光子。在本文中，我们研究了在电信波段发射的立方碳化硅（3C-SiC）中的亮单光子发射器。我们发现，这些发射器在室温下具有良好的稳定性和亮度，计数率约为 MHz。再加上 SiC 是一种易于生长和制造的材料这一事实，我们的结果可能与未来量子通信技术的应用有关。
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