Institute for Microelectronics and Microsystems, National Research Council, I-80131 Napoli, Italy.
Sensors (Basel). 2018 Nov 3;18(11):3755. doi: 10.3390/s18113755.
This paper presents the design, fabrication, and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier Φ of ~673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under an applied reverse bias of 8 V. In addition, the device performance is discussed in terms of normalized noise and noise-equivalent power. The proposed devices will pave the way towards the development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate, and both operating at 1.55 µm.
本文提出了一种工作在 1.55 µm 的肖特基铒/硅光电探测器的设计、制造和特性。这些铒/硅结在室温下使用电和光测量进行了仔细的特性分析。推断出肖特基势垒 Φ 约为 673meV；在 8V 的反向偏压下，光电探测器在室温下的外部响应率为 0.55mA/W。此外，还根据归一化噪声和噪声等效功率讨论了器件性能。所提出的器件将为基于 Er 的光电探测器和光源的发展铺平道路，这些器件将在同一硅衬底上进行单片集成，并在 1.55 µm 下工作。
