Fang Q, Song J F, Tao S H, Yu M B, Lo G Q, Kwong D L
Institute of Microelectronics, A*STAR, 11 Science Park Road, Science Park II, Singapore 117685.
Opt Express. 2008 Apr 28;16(9):6425-32. doi: 10.1364/oe.16.006425.
In this communication, the sub-micron size polycrystalline silicon (poly- Si) single mode waveguides are fabricated and integrated with SiON waveguide coupler by deep UV lithography. The propagation loss of poly-Si waveguide and coupling loss with optical flat polarization-maintaining fiber (PMF) are measured. For whole C-band (i.e., lambda approximately 1520-1565nm), the propagation loss of TE mode is measured to approximately 6.45+/-0.3dB/cm. The coupling loss with optical flat PMF is approximately 3.4dB/facet for TE mode. To the best of our knowledge, the propagation loss is among the best reported results. This communication discusses the factors reducing the propagation loss, especially the effect of the refractive index contrast. Compared to the SiO(2) cladding, poly-Si waveguide with SiON cladding exhibits lower propagation loss.
在本通信中，通过深紫外光刻技术制备了亚微米尺寸的多晶硅（poly-Si）单模波导，并将其与SiON波导耦合器集成。测量了多晶硅波导的传播损耗以及与光学平板保偏光纤（PMF）的耦合损耗。对于整个C波段（即波长约为1520 - 1565nm），TE模式的传播损耗测量结果约为6.45±0.3dB/cm。TE模式与光学平板PMF的耦合损耗约为3.4dB/面。据我们所知，该传播损耗是所报道的最佳结果之一。本通信讨论了降低传播损耗的因素，特别是折射率对比度的影响。与SiO₂包层相比，具有SiON包层的多晶硅波导表现出更低的传播损耗。
