Casalino Maurizio
Institute of Applied Science and Intelligent Systems "Eduardo Caianiello" (CNR), Via P. Castellino n. 141, 80131 Naples, Italy.
Micromachines (Basel). 2020 Jul 22;11(8):708. doi: 10.3390/mi11080708.
In this work a new concept of silicon resonant cavity enhanced photodetector working at 1550 nm has been theoretically investigated. The absorption mechanism is based on the internal photoemission effect through a graphene/silicon Schottky junction incorporated into a silicon-based Fabry-Pérot optical microcavity whose input mirror is constituted by a double silicon-on-insulator substrate. As output mirror we have investigated two options: a distributed Bragg reflector constituted by some periods of silicon nitride/hydrogenated amorphous silicon and a metallic gold reflector. In addition, we have investigated and compared two configurations: one where the current is collected in the transverse direction with respect to the direction of the incident light, the other where it is collected in the longitudinal direction. We show that while the former configuration is characterized by a better responsivity, spectral selectivity and noise equivalent power, the latter configuration is superior in terms of bandwidth and responsivity × bandwidth product. Our results show responsivity of 0.24 A/W, bandwidth in GHz regime, noise equivalent power of 0.6 nW/cm√Hz and full with at half maximum of 8.5 nm. The whole structure has been designed to be compatible with silicon technology.
在这项工作中，对一种工作在1550纳米的新型硅谐振腔增强型光电探测器的概念进行了理论研究。其吸收机制基于通过一个集成在硅基法布里-珀罗光学微腔中的石墨烯/硅肖特基结的内光电效应，该微腔的输入镜由双层绝缘体上硅衬底构成。作为输出镜，我们研究了两种选择：一种是由若干周期的氮化硅/氢化非晶硅构成的分布式布拉格反射器，另一种是金属金反射器。此外，我们研究并比较了两种配置：一种是电流相对于入射光方向在横向收集，另一种是在纵向收集。我们表明，虽然前一种配置具有更好的响应度、光谱选择性和噪声等效功率，但后一种配置在带宽和响应度×带宽乘积方面更优。我们的结果显示响应度为0.24 A/W，带宽处于吉赫兹范围，噪声等效功率为0.6 nW/cm√Hz，半高宽为8.5纳米。整个结构设计为与硅技术兼容。
