通过表面微机械加工CMOS MEMS工艺制造的压阻式温度传感器。

Piezoresistive temperature sensors fabricated by a surface micromachining CMOS MEMS process.

作者信息

Cai Chunhua, Tan Junyan, Hua Di, Qin Ming, Zhu Nianfang

机构信息

College of Internet of Things, Hohai University, Nanjing, 210098, China.

Jiangsu Key Laboratory of Power Transmission & Distribution Equipment Technology, Hohai University, Nanjing, 210098, China.

出版信息

Sci Rep. 2018 Nov 20;8(1):17065. doi: 10.1038/s41598-018-35113-z.

DOI:10.1038/s41598-018-35113-z

PMID:30459315

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6244008/

Abstract

This paper presents a micromachined monocrystalline silicon piezoresistive temperature sensor fabricated by a surface micromachining CMOS (Complementary Metal Oxide Semiconductor) MEMS (Micro-Electro-Mechanical System) process. The design of the temperature sensor is based on the structure of the multi-layer cantilever beam and the bimetallic effect. The temperature change of the cantilever beam is translated into the change of the piezoresistance's value. The test results show that the sensitivities of the sensors are 27.9 mV/°C with 100 Ω/▯ piezoresistance between -40 °C to 60 °C and 7.4 mV/°C with 400 Ω/▯ piezoresistance between -90 °C to 60 °C. The temperature sensor proposed in this paper can be used in radiosondes for its low operating temperature (as low as -90 °C), small size (below 1 mm) and low heat capacity.

摘要

本文介绍了一种通过表面微机械加工互补金属氧化物半导体（CMOS）微机电系统（MEMS）工艺制造的微机械单晶硅压阻式温度传感器。该温度传感器的设计基于多层悬臂梁结构和双金属效应。悬臂梁的温度变化被转换为压阻值的变化。测试结果表明，在-40°C至60°C范围内，100Ω/□压阻的传感器灵敏度为27.9mV/°C；在-90°C至60°C范围内，400Ω/□压阻的传感器灵敏度为7.4mV/°C。本文提出的温度传感器因其低工作温度（低至-90°C）、小尺寸（小于1mm）和低热容量，可用于无线电探空仪。