Li Dapan, Lan Changyong, Manikandan Arumugam, Yip SenPo, Zhou Ziyao, Liang Xiaoguang, Shu Lei, Chueh Yu-Lun, Han Ning, Ho Johnny C
Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
Shenzhen Research Institute, City University of Hong Kong, 518057, Shenzhen, P.R. China.
Nat Commun. 2019 Apr 10;10(1):1664. doi: 10.1038/s41467-019-09606-y.
Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline InGaSb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric InGaSb (0.09 < x < 0.28) NWs on amorphous substrates with the uniform phase-purity and <110 >-orientation via chemical vapor deposition. The as-prepared NWs show excellent electrical and optoelectronic characteristics, including the high hole mobility (i.e. 463 cm V s for InGaSb NWs) as well as broadband and ultrafast photoresponse over the visible and infrared optical communication region (1550 nm). Specifically, the InGaSb NW device yields efficient rise and decay times down to 38 and 53 μs, respectively, along with the responsivity of 6000 A W and external quantum efficiency of 4.8 × 10 % towards 1550 nm regime. High-performance NW parallel-arrayed devices can also be fabricated to illustrate their large-scale device integrability for next-generation, ultrafast, high-responsivity and broadband photodetectors.
由于具有可调节的带隙和高载流子迁移率，三元III-V族纳米线（NWs）在先进应用中展现出了巨大潜力。然而，大规模且高结晶性的铟镓锑纳米线的合成仍然是一项挑战。在此，我们通过化学气相沉积法在非晶衬底上实现了高密度且结晶的化学计量比铟镓锑（0.09 < x < 0.28）纳米线，其具有均匀的相纯度且沿<110>方向取向。所制备的纳米线展现出优异的电学和光电特性，包括高空穴迁移率（即铟镓锑纳米线为463 cm² V⁻¹ s⁻¹）以及在可见光和红外光通信区域（1550 nm）的宽带和超快光响应。具体而言，铟镓锑纳米线器件的上升和衰减时间分别低至38和53 μs，对1550 nm波段的响应度为6000 A W⁻¹，外部量子效率为4.8×10³%。还可以制造高性能的纳米线平行阵列器件，以说明其用于下一代超快、高响应度和宽带光电探测器的大规模器件集成性。
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