Gu Peng, Zhu Xinghua, Wu Haihua, Yang Dingyu
College of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu 610225, China.
College of Intelligent Manufacturing, Sichuan University of Arts and Science, Dazhou 635002, China.
Materials (Basel). 2018 Dec 8;11(12):2496. doi: 10.3390/ma11122496.
Cadmium telluride (CdTe) films were deposited on glass substrates by direct current (DC) magnetron sputtering, and the effect of substrate-target distance () on properties of the CdTe films was investigated by observations of X-ray diffraction (XRD) patterns, atomic force microscopy (AFM), UV-VIS spectra, optical microscopy, and the Hall-effect measurement system. XRD analysis indicated that all samples exhibited a preferred orientation along the (111) plane, corresponding to the zinc blende structure, and films prepared using of 4 cm demonstrated better crystallinity than the others. AFM studies revealed that surface morphologies of the CdTe films were strongly dependent on , and revealed a large average grain size of 35.25 nm and a high root mean square (RMS) roughness value of 9.66 nm for films fabricated using of 4 cm. UV-VIS spectra suggested the energy band gap () initially decreased from 1.5 to 1.45 eV, then increased to 1.68 eV as increased from 3.5 to 5 cm. The Hall-effect measurement system revealed that CdTe films prepared with a of 4 cm exhibited optimal electrical properties, and the resistivity, carrier mobility, and carrier concentration were determined to be 2.3 × 10⁵ Ω∙cm, 6.41 cm²∙V∙S, and 4.22 × 10 cm, respectively.
通过直流（DC）磁控溅射在玻璃基板上沉积碲化镉（CdTe）薄膜，并通过观察X射线衍射（XRD）图谱、原子力显微镜（AFM）、紫外-可见光谱、光学显微镜和霍尔效应测量系统，研究了衬底-靶材距离（）对CdTe薄膜性能的影响。XRD分析表明，所有样品均沿（111）面呈现择优取向，对应于闪锌矿结构，使用4 cm的制备的薄膜比其他薄膜具有更好的结晶度。AFM研究表明，CdTe薄膜的表面形貌强烈依赖于，对于使用4 cm制备的薄膜，平均晶粒尺寸为35.25 nm，均方根（RMS）粗糙度值为9.66 nm。紫外-可见光谱表明，随着从3.5 cm增加到5 cm，能带隙（）最初从1.5 eV降至1.45 eV，然后增加到1.68 eV。霍尔效应测量系统表明，使用4 cm制备的CdTe薄膜表现出最佳的电学性能，电阻率、载流子迁移率和载流子浓度分别测定为2.3×10⁵Ω∙cm、6.41 cm²∙V∙S和4.22×10 cm。
