Oh Seung Yoon, Jeong Yeong Je, Kang Inho, Park Ji-Hyeon, Yeom Min Jae, Jeon Dae-Woo, Yoo Geonwook
Department of Intelligent Semiconductor, Soongsil University, Seoul 06938, Republic of Korea.
School of Electronic Engineering, Soongsil University, Seoul 06938, Republic of Korea.
Micromachines (Basel). 2024 Jan 14;15(1):133. doi: 10.3390/mi15010133.
Among various polymorphic phases of gallium oxide (GaO), α-phase GaO has clear advantages such as its heteroepitaxial growth as well as wide bandgap, which is promising for use in power devices. In this work, we demonstrate α-GaO MOSFETs with hybrid Schottky drain (HSD) contact, comprising both Ohmic and Schottky electrode regions. In comparison with conventional Ohmic drain (OD) contact, a lower on-resistance (R) of 2.1 kΩ mm is achieved for variable channel lengths. Physics-based TCAD simulation is performed to validate the turn-on characteristics of the Schottky electrode region and the improved R. Electric-field analysis in the off-state is conducted for both the OD and HSD devices. Furthermore, a record breakdown voltage (BV) of 2.8 kV is achieved, which is superior to the 1.7 kV of the compared OD device. Our results show that the proposed HSD contact with a further optimized design can be a promising drain electrode scheme for α-GaO power MOSFETs.
在氧化镓（GaO）的各种多晶相中，α相GaO具有明显优势，如异质外延生长以及宽带隙，这使其在功率器件应用方面颇具前景。在这项工作中，我们展示了具有混合肖特基漏极（HSD）接触的α-GaO金属氧化物半导体场效应晶体管（MOSFET），其包括欧姆和肖特基电极区域。与传统的欧姆漏极（OD）接触相比，对于可变沟道长度，实现了更低的导通电阻（R），为2.1 kΩ·mm。进行了基于物理的工艺计算机辅助设计（TCAD）模拟，以验证肖特基电极区域的开启特性和改善后的R。对OD和HSD器件都进行了关断状态下的电场分析。此外，实现了2.8 kV的创纪录击穿电压（BV），优于所比较的OD器件的1.7 kV。我们的结果表明，经过进一步优化设计的所提出的HSD接触，对于α-GaO功率MOSFET而言可能是一种很有前景的漏极电极方案。
