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采用纳米光刻技术在 Si 衬底上生长的紫外 LED 上制备 AlGaN 纳米结构。

Fabrication of AlGaN nanostructures by nanolithography on ultraviolet LEDs grown on Si substrates.

机构信息

Key Laboratory of Nano-devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, People's Republic of China. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, 230026, People's Republic of China.

出版信息

Nanotechnology. 2019 May 3;30(18):185201. doi: 10.1088/1361-6528/aafd3d. Epub 2019 Jan 10.

Abstract

AlGaN nanostructures have many applications because of their interesting and unique properties. Here we report a simple fabrication method of AlGaN nanostructures by nanolithography on ultraviolet (UV) LEDs grown on Si substrates. We also studied the effects of various AlGaN nanostructure arrays on the performance of the UV (370 nm) thin-film LEDs with an embedded n-type contact. The output power of the UV LEDs with nanostructures was enhanced by 3.9 times compared to the flat UV LEDs, while no penalty was induced for the electrical characteristics of the UV LEDs. Additionally, the far-field radiation pattern of the UV LEDs with nanostructures showed much better directionality and a much stronger intensity than the flat UV LEDs, which would be of great benefit to directional UV curing applications.

摘要

氮化铝镓纳米结构因其有趣和独特的性质而有许多应用。在这里,我们报告了一种在 Si 衬底上生长的紫外(UV)发光二极管上通过纳米光刻制造氮化铝镓纳米结构的简单方法。我们还研究了各种氮化铝镓纳米结构阵列对嵌入 n 型接触的 UV(370nm)薄膜发光二极管性能的影响。与平面 UV 发光二极管相比,具有纳米结构的 UV 发光二极管的输出功率提高了 3.9 倍,而对 UV 发光二极管的电特性没有任何影响。此外,具有纳米结构的 UV 发光二极管的远场辐射模式显示出比平面 UV 发光二极管更好的方向性和更强的强度,这将对定向 UV 固化应用非常有益。

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