Maraj Mudassar, Min Li, Sun Wenhong
Research Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China.
MOE Key Laboratory of New Processing Technology for Non-Ferrous Metals and the Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China.
Nanomaterials (Basel). 2022 Oct 24;12(21):3731. doi: 10.3390/nano12213731.
The current pandemic crisis caused by SARS-CoV-2 has also pushed researchers to work on LEDs, especially in the range of 220-240 nm, for the purpose of disinfecting the environment, but the efficiency of such deep UV-LEDs is highly demanding for mass adoption. Over the last two decades, several research groups have worked out that the optical power of GaN-based LEDs significantly decreases during operation, and with the passage of time, many mechanisms responsible for the degradation of such devices start playing their roles. Only a few attempts, to explore the reliability of these LEDs, have been presented so far which provide very little information on the output power degradation of these LEDs with the passage of time. Therefore, the aim of this review is to summarize the degradation factors of AlGaN-based near UV-LEDs emitting in the range of 200-350 nm by means of combined optical and electrical characterization so that work groups may have an idea of the issues raised to date and to achieve a wavelength range needed for disinfecting the environment from SARS-CoV-2. The performance of devices submitted to different stress conditions has been reviewed for the reliability of AlGaN-based UV-LEDs based on the work of different research groups so far, according to our knowledge. In particular, we review: (1) fabrication strategies to improve the efficiency of UV-LEDs; (2) the intensity of variation under constant current stress for different durations; (3) creation of the defects that cause the degradation of LED performance; (4) effect of degradation on C-V characteristics of such LEDs; (5) I-V behavior variation under stress; (6) different structural schemes to enhance the reliability of LEDs; (7) reliability of LEDs ranging from 220-240 nm; and (8) degradation measurement strategies. Finally, concluding remarks for future research to enhance the reliability of near UV-LEDs is presented. This draft presents a comprehensive review for industry and academic research on the physical properties of an AlGaN near UV-LEDs that are affected by aging to help LED manufacturers and end users to construct and utilize such LEDs effectively and provide the community a better life standard.
由严重急性呼吸综合征冠状病毒2(SARS-CoV-2)引发的当前大流行危机也促使研究人员致力于开发发光二极管(LED),特别是波长在220 - 240纳米范围内的LED,用于环境消毒,但这种深紫外LED的效率对于大规模应用要求极高。在过去二十年里,多个研究团队发现基于氮化镓(GaN)的LED在工作过程中光功率会显著下降,随着时间推移,许多导致此类器件退化的机制开始发挥作用。到目前为止,仅有少数探索这些LED可靠性的尝试,且关于这些LED输出功率随时间退化的信息非常少。因此,本综述的目的是通过光学和电学联合表征,总结发射波长在200 - 350纳米范围内的基于氮化铝镓(AlGaN)的近紫外LED的退化因素,以便各研究团队了解迄今提出的问题,并实现用于对SARS-CoV-2进行环境消毒所需的波长范围。根据我们目前所知,基于不同研究团队的工作,对处于不同应力条件下的器件性能进行了综述,以评估基于AlGaN的紫外LED的可靠性。具体而言,我们综述了:(1)提高紫外LED效率的制造策略;(2)在不同持续时间的恒流应力下的变化强度;(3)导致LED性能退化的缺陷的产生;(4)退化对此类LED电容 - 电压(C-V)特性的影响;(5)应力下电流 - 电压(I-V)行为的变化;(6)增强LED可靠性的不同结构方案;(7)波长在220 - 240纳米范围内的LED的可靠性;以及(8)退化测量策略。最后,给出了关于未来提高近紫外LED可靠性研究的总结性评论。本草案对受老化影响的AlGaN近紫外LED的物理特性进行了全面综述,供行业和学术研究参考,以帮助LED制造商和终端用户有效构建和使用此类LED,并为社会提供更高的生活标准。