Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, 67000, Strasbourg, France.
Chemical and Multifunctional Materials Lab, Thales Research and Technology, 91767, Palaiseau, France.
Adv Mater. 2019 Mar;31(10):e1806663. doi: 10.1002/adma.201806663. Epub 2019 Jan 21.
The pervasiveness of information technologies is generating an impressive amount of data, which need to be accessed very quickly. Nonvolatile memories (NVMs) are making inroads into high-capacity storage to replace hard disk drives, fuelling the expansion of the global storage memory market. As silicon-based flash memories are approaching their fundamental limit, vertical stacking of multiple memory cell layers, innovative device concepts, and novel materials are being investigated. In this context, emerging 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous, offer a host of physical and chemical properties, which could both improve existing memory technologies and enable the next generation of low-cost, flexible, and wearable storage devices. Herein, an overview of graphene and related 2D materials (GRMs) in different types of NVM cells is provided, including resistive random-access, flash, magnetic and phase-change memories. The physical and chemical mechanisms underlying the switching of GRM-based memory devices studied in the last decade are discussed. Although at this stage most of the proof-of-concept devices investigated do not compete with state-of-the-art devices, a number of promising technological advancements have emerged. Here, the most relevant material properties and device structures are analyzed, emphasizing opportunities and challenges toward the realization of practical NVM devices.
信息技术的普及正在产生大量的数据，这些数据需要快速访问。非易失性存储器（NVM）正在进入大容量存储领域以取代硬盘驱动器，推动全球存储内存市场的扩张。由于硅基闪存已经接近其基本极限，因此正在研究多层存储单元的垂直堆叠、创新的器件概念和新型材料。在这种情况下，新兴的二维材料，如石墨烯、过渡金属二卤化物和黑磷，提供了一系列物理和化学性质，这既可以改进现有的存储技术，又可以实现下一代低成本、灵活和可穿戴的存储设备。本文综述了不同类型的 NVM 单元中石墨烯和相关二维材料（GRMs）的研究进展，包括电阻式随机存取存储器、闪存、磁存储器和相变存储器。讨论了过去十年中研究的基于 GRM 的存储器件的开关的物理和化学机制。尽管在现阶段，大多数经过验证的概念设备并不能与最先进的设备竞争，但已经出现了一些有前途的技术进步。在这里，分析了最相关的材料特性和器件结构，强调了实现实用 NVM 器件的机遇和挑战。
