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用于视网膜下植入物的全集成光感刺激器设计。

Fully Integrated Light-Sensing Stimulator Design for Subretinal Implants.

机构信息

Department of Medical Science, Korea University, Seoul 02841, Korea.

Department of Health Science and Technology, GAIHST, Incheon 21999, Korea.

出版信息

Sensors (Basel). 2019 Jan 28;19(3):536. doi: 10.3390/s19030536.

Abstract

This paper presents a fully integrated photodiode-based low-power and low-mismatch stimulator for a subretinal prosthesis. It is known that a subretinal prosthesis achieves 1600-pixel stimulators on a limited single-chip area that is implanted beneath the bipolar cell layer. However, the high-density pixels cause high power dissipation during stimulation and high fabrication costs because of special process technologies such as the complementary metal-oxide semiconductor CMOS image sensor process. In addition, the many residual charges arising from the high-density pixel stimulation have deleterious effects, such as tissue damage and electrode corrosion, on the retina tissue. In this work, we adopted a switched-capacitor current mirror technique for the single-pixel stimulator (SPStim) that enables low power consumption and low mismatch in the subretinal device. The customized P+/N-well photodiode used to sense the incident light in the SPStim also reduces the fabrication cost. The 64-pixel stimulators are fabricated in a standard 0.35-μm CMOS process along with a global digital controller, which occupies a chip area of 4.3 × 3.2 mm² and are ex-vivo demonstrated using a dissected pig eyeball. According to measured results, the SPStim accomplishes a maximum biphasic pulse amplitude of 143 μA, which dissipates an average power of 167 μW in a stimulation period of 5 ms, and an average mismatch of 1.12 % between the cathodic and anodic pulses.

摘要

本文提出了一种完全集成的基于光电二极管的低功耗、低失配刺激器,用于视网膜下假体。众所周知,视网膜下假体在植入双极细胞层下方的有限单个芯片面积上实现了 1600 个像素的刺激器。然而,高密度像素在刺激期间会消耗大量功率,并由于特殊工艺技术(如互补金属氧化物半导体 CMOS 图像传感器工艺)而导致制造成本高。此外,高密度像素刺激产生的许多残余电荷对视网膜组织有有害影响,如组织损伤和电极腐蚀。在这项工作中,我们采用了开关电容电流镜技术用于单像素刺激器 (SPStim),从而实现了低功耗和低失配的视网膜下设备。用于感测 SPStim 中入射光的定制 P+/N 阱光电二极管也降低了制造成本。64 像素刺激器采用标准的 0.35-μm CMOS 工艺与全局数字控制器一起制造,占用了 4.3×3.2mm² 的芯片面积,并使用解剖的猪眼球进行了离体演示。根据测量结果,SPStim 实现了最大双相脉冲幅度为 143μA,在 5ms 的刺激周期内平均功率消耗为 167μW,并且阴极和阳极脉冲之间的平均失配为 1.12%。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/258f/6387200/b1894496b217/sensors-19-00536-g001.jpg

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