Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA.
Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA.
Sci Adv. 2017 Mar 10;3(3):e1602076. doi: 10.1126/sciadv.1602076. eCollection 2017 Mar.
Previous breakthroughs in stretchable electronics stem from strain engineering and nanocomposite approaches. Routes toward intrinsically stretchable molecular materials remain scarce but, if successful, will enable simpler fabrication processes, such as direct printing and coating, mechanically robust devices, and more intimate contact with objects. We report a highly stretchable conducting polymer, realized with a range of enhancers that serve a dual function: (i) they change morphology and (ii) they act as conductivity-enhancing dopants in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The polymer films exhibit conductivities comparable to the best reported values for PEDOT:PSS, with over 3100 S/cm under 0% strain and over 4100 S/cm under 100% strain-among the highest for reported stretchable conductors. It is highly durable under cyclic loading, with the conductivity maintained at 3600 S/cm even after 1000 cycles to 100% strain. The conductivity remained above 100 S/cm under 600% strain, with a fracture strain of 800%, which is superior to even the best silver nanowire- or carbon nanotube-based stretchable conductor films. The combination of excellent electrical and mechanical properties allowed it to serve as interconnects for field-effect transistor arrays with a device density that is five times higher than typical lithographically patterned wavy interconnects.
先前在可拉伸电子产品方面的突破源于应变工程和纳米复合材料方法。实现具有内在可拉伸性的分子材料的途径仍然很少,但如果成功,将能够实现更简单的制造工艺,例如直接印刷和涂层,具有机械坚固性的设备,以及与物体更紧密的接触。我们报告了一种高度可拉伸的导电聚合物,该聚合物采用了一系列增强剂,这些增强剂具有双重功能:(i)它们改变形态,(ii)它们在聚(3,4-亚乙基二氧噻吩):聚(苯乙烯磺酸盐)(PEDOT:PSS)中作为增强导电性的掺杂剂。聚合物薄膜表现出与 PEDOT:PSS 报道的最佳值相当的电导率,在 0%应变下超过 3100 S/cm,在 100%应变下超过 4100 S/cm-这是报道的可拉伸导体中最高的之一。它在循环加载下具有高度的耐用性,即使在 1000 次循环至 100%应变后,其电导率仍保持在 3600 S/cm。在 600%应变下,电导率仍保持在 100 S/cm 以上,断裂应变为 800%,甚至优于最好的银纳米线或碳纳米管基可拉伸导体薄膜。优异的电气和机械性能的结合使其能够用作场效应晶体管阵列的互连,其器件密度比典型的光刻图案波纹互连高五倍。