Brus V V, Maslyanchuk O L, Solovan M M, Maryanchuk P D, Fodchuk I, Gnatyuk V A, Vakhnyak N D, Melnychuk S V, Aoki T
Chernivtsi National University, Institute of Physics, Engineering and Computer Sciences, Kotsubynskiy 2, 58002, Chernivtsi, Ukraine.
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut für Silizium Photovoltaik, Kekuléstr. 5, 12489, Berlin, Germany.
Sci Rep. 2019 Jan 31;9(1):1065. doi: 10.1038/s41598-018-37637-w.
We developed a new concept of X- and γ-ray radiation semiconductor detectors based on a large area graphene/semi-insulating single crystal CdTe Schottky-type heterojunction. These two terminal electronic devices can be easily fabricated by forming a Van der Waals contact between large area chemical vapor deposited graphene and CdTe substrates in air and at room temperature. This approach significantly reduces the fabrication cost and improves the reproducibility and stability of electrical properties. A detailed analysis of their AC and DC electrical properties was carried out in order to determine the width of the space charge region and dominant charge transport mechanisms at reverse bias. The unoptimized graphene/CdTe heterojunction detectors exhibited a promising spectral resolution of Am (59 keV) and Cs (662 keV) isotope radiation at room temperature.
我们基于大面积石墨烯/半绝缘单晶碲化镉肖特基型异质结，开发了一种新型的X射线和γ射线辐射半导体探测器。通过在空气中室温下在大面积化学气相沉积石墨烯和碲化镉衬底之间形成范德华接触，可以轻松制造这些两端电子器件。这种方法显著降低了制造成本，并提高了电学性能的可重复性和稳定性。为了确定反向偏置下空间电荷区的宽度和主要电荷传输机制，对其交流和直流电学性能进行了详细分析。未经优化的石墨烯/碲化镉异质结探测器在室温下对镅（59 keV）和铯（662 keV）同位素辐射表现出有前景的光谱分辨率。
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