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环境透射电子显微镜揭示的GaSb纳米线直径控制

Diameter Control of GaSb Nanowires Revealed by Environmental Transmission Electron Microscopy.

作者信息

Marnauza Mikelis, Sjökvist Robin, Lehmann Sebastian, Dick Kimberly A

机构信息

Centre for Analysis and Synthesis, Lund University, 22100 Lund, Sweden.

NanoLund, Lund University, 22100 Lund, Sweden.

出版信息

J Phys Chem Lett. 2023 Aug 24;14(33):7404-7410. doi: 10.1021/acs.jpclett.3c01928. Epub 2023 Aug 11.

Abstract

Several nanowire properties are strongly dependent on their diameter, which is notoriously difficult to control for III-Sb nanowires compared with other III-V nanowires. Herein environmental transmission electron microscopy is utilized to study the growth of Au nanoparticle seeded GaSb nanowires . In this study, the real time changes to morphology and nanoparticle composition as a result of precursor V/III ratio are investigated. For a wide range of the growth parameters, it is observed that decreasing the V/III ratio increases the nanoparticle volume through Ga accumulation in the nanoparticle. The increase in nanoparticle volume in turn forces the nanowire diameter to expand. The effect of the V/III ratio on diameter allows the engineering of diameter modulated nanowires, where the modulation persisted after the growth. Lastly, this study demonstrates the observed trends can be reproduced in a conventional system, highlighting the transferability and importance of the results obtained .

摘要

几种纳米线特性强烈依赖于其直径,与其他III-V族纳米线相比,III-Sb族纳米线的直径 notoriously difficult to control。在此,利用环境透射电子显微镜研究金纳米颗粒种子辅助生长的GaSb纳米线。在本研究中,研究了前驱体V/III比导致的形态和纳米颗粒组成的实时变化。对于广泛的生长参数,观察到降低V/III比会通过纳米颗粒中Ga的积累增加纳米颗粒体积。纳米颗粒体积的增加进而迫使纳米线直径扩大。V/III比对直径的影响使得能够设计直径调制的纳米线,其中调制在生长后仍然存在。最后,本研究表明所观察到的趋势可以在传统系统中重现,突出了所得结果的可转移性和重要性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7103/10461298/4f82ab0694e5/jz3c01928_0001.jpg

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