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柔性电解质栅控有机场效应晶体管中自组装单分子层对栅电极的修饰：功函数与电容效应

Modification of the gate electrode by self-assembled monolayers in flexible electrolyte-gated organic field effect transistors: work function capacitance effects.

作者信息

Leonardi Francesca, Tamayo Adrián, Casalini Stefano, Mas-Torrent Marta

机构信息

Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Networking Research Center on Bioengineering, Biomaterials and Nanomedicine (CIBER-BBN), Campus de la Universitat Autònoma de Barcelona, Cerdanyola, E-08193 Barcelona, Spain. Email:

出版信息

RSC Adv. 2018 Aug 1;8(48):27509-27515. doi: 10.1039/c8ra05300f. Epub 2018 Aug 2.

DOI:10.1039/c8ra05300f
PMID:30713682
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6333246/
Abstract

Understanding the physics behind the operational mechanism of Electrolyte-Gated Organic Field-Effect Transistors (EGOFETs) is of paramount importance for the correct interpretation of the device response. Here, we report the systematic functionalization of the gate electrode of an EGOFET with self-assembled monolayers with a variety of dipolar moments showing that both the chemical nature and the monolayer density influence the electrical characteristics of the device.

摘要

了解电解质门控有机场效应晶体管（EGOFET）工作机制背后的物理原理对于正确解释器件响应至关重要。在此，我们报道了用具有各种偶极矩的自组装单分子层对EGOFET的栅电极进行系统功能化，结果表明化学性质和单分子层密度都会影响器件的电学特性。

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