Kwoen Jinkwan, Jang Bongyong, Watanabe Katsuyuki, Arakawa Yasuhiko
Opt Express. 2019 Feb 4;27(3):2681-2688. doi: 10.1364/OE.27.002681.
Laser devices for silicon photonics are expected to be implemented in an integrated environment to complement CMOS devices. For this reason, quantum dot (QD) lasers with excellent thermal properties have been considered as strong candidates for Si photonics light sources. The direct growth of QD lasers on Si (001) on-axis substrates has been garnering attention owing to the possibility of monolithic integration on a CMOS-compatible wafer. In this paper, we report on the high-temperature (over 100°C) continuous-wave operation of an InAs/GaAs QD laser directly grown on on-axis Si (001) substrates through the use of only molecular beam epitaxy.
用于硅光子学的激光器件有望在集成环境中实现，以补充CMOS器件。因此，具有优异热性能的量子点（QD）激光器被认为是硅光子学光源的有力候选者。由于有可能在与CMOS兼容的晶圆上进行单片集成，在Si（001）轴向衬底上直接生长量子点激光器一直备受关注。在本文中，我们报告了通过仅使用分子束外延技术在轴向Si（001）衬底上直接生长的InAs/GaAs量子点激光器在高于100°C的高温下的连续波操作。
