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通过扫描莫尔条纹对有机晶体进行低剂量扫描透射电子显微镜观察。

Low dose scanning transmission electron microscopy of organic crystals by scanning moiré fringes.

作者信息

S'ari Mark, Cattle James, Hondow Nicole, Brydson Rik, Brown Andy

机构信息

School of Chemical and Process Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom. Electronic address: M.S.S'

School of Chemical and Process Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom.

出版信息

Micron. 2019 May;120:1-9. doi: 10.1016/j.micron.2019.01.014. Epub 2019 Feb 1.

Abstract

In the pharmaceutical industry, it is important to determine the effects of crystallisation and processes, such as milling, on the generation of crystalline defects in formulated products. Conventional transmission electron microscopy and scanning transmission electron microscopy (STEM) can be used to obtain information on length scales unobtainable by other techniques, however, organic crystals are extremely susceptible to electron beam damage. This work demonstrates a bright field (BF) STEM method that can increase the information content per unit specimen damage by the use of scanning moiré fringes (SMFs). SMF imaging essentially provides a magnification of the crystal lattice through the interference between closely aligned lattice fringes and a scanning lattice of similar spacing. The generation of SMFs is shown for three different organic crystals with varying electron beam sensitivity, theophylline, furosemide and felodipine. The electron fluence used to acquire the BF-STEM for the most sensitive material, felodipine was approximately 3.5 e/Å. After one additional scan of felodipine (total fluence of approximately 7.0 e/Å), the SMFs were no longer visible due to extensive damage caused to the crystal. Irregularity in the SMFs suggested the presence of defects in all the organic crystals. Further effort is required to improve the data analysis and interpretation of the resulting SMF images, allowing more information regarding the crystal structure and defects to be extracted.

摘要

在制药行业,确定结晶及诸如研磨等工艺对制剂产品中晶体缺陷产生的影响非常重要。传统透射电子显微镜和扫描透射电子显微镜(STEM)可用于获取其他技术无法获得的长度尺度信息,然而,有机晶体极易受到电子束损伤。这项工作展示了一种明场(BF)STEM方法,该方法可通过使用扫描莫尔条纹(SMF)来增加单位样品损伤的信息含量。SMF成像本质上是通过紧密排列的晶格条纹与具有相似间距的扫描晶格之间的干涉来放大晶格。展示了三种具有不同电子束敏感性的有机晶体茶碱、呋塞米和非洛地平产生的SMF。用于获取最敏感材料非洛地平的BF-STEM的电子注量约为3.5 e/Å。对非洛地平进行一次额外扫描(总注量约为7.0 e/Å)后,由于晶体受到广泛损伤,SMF不再可见。SMF的不规则性表明所有有机晶体中都存在缺陷。需要进一步努力改进对所得SMF图像的数据分析和解释,以便提取更多关于晶体结构和缺陷的信息。

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