Department of Electrical & Computer Engineering, Ben-Gurion University of the Negev, POB 653, Beer-Sheva 8410501, Israel.
Department of Chemistry, Ben-Gurion University of the Negev, POB 653, Beer-Sheva 8410501, Israel.
Biosens Bioelectron. 2019 May 1;132:143-161. doi: 10.1016/j.bios.2019.03.003. Epub 2019 Mar 5.
The importance of specific and label-free detection of proteins via antigen-antibody interactions for the development of point-of-care testing devices has greatly influenced the search for a more accessible, sensitive, low cost and robust sensors. The vision of silicon field-effect transistor (FET)-based sensors has been an attractive venue for addressing the challenge as it potentially offers a natural path to incorporate sensors with the existing mature Complementary Metal Oxide Semiconductor (CMOS) industry; this provides a stable and reliable technology, low cost for potential disposable devices, the potential for extreme minituarization, low electronic noise levels, etc. In the current review we focus on silicon-based immunological FET (ImmunoFET) for specific and label-free sensing of proteins through antigen-antibody interactions that can potentially be incorporated into the CMOS industry; hence, immunoFETs based on nano devices (nanowire, nanobelts, carbon nanotube, etc.) are not treated here. The first part of the review provides an overview of immunoFET principles of operation and challenges involved with the realization of such devices (i.e. e.g. Debye length, surface functionalization, noise, etc.). In the second part we provide an overview of the state-of-the-art silicon-based immunoFET structures and novelty, principles of operation and sensing performance reported to date.
通过抗原-抗体相互作用对蛋白质进行特异性和无标记检测的重要性，极大地推动了人们对更易获取、更灵敏、低成本和更稳健的传感器的研究。基于硅场效应晶体管（FET）的传感器的愿景一直是一个很有吸引力的研究方向，因为它有可能为与现有的成熟互补金属氧化物半导体（CMOS）工业相结合的传感器提供一条自然途径；这为潜在的一次性设备提供了稳定可靠的技术、低成本、极端小型化的潜力、低电子噪声水平等。在本综述中，我们重点关注基于硅的免疫场效应晶体管（ImmunoFET），用于通过抗原-抗体相互作用进行特定和无标记的蛋白质检测，这些检测有可能被纳入 CMOS 工业；因此，这里不讨论基于纳米器件（纳米线、纳米带、碳纳米管等）的 ImmunoFET。综述的第一部分概述了 ImmunoFET 的工作原理以及实现此类器件所涉及的挑战（例如德拜长度、表面功能化、噪声等）。在第二部分，我们概述了基于硅的 ImmunoFET 结构的最新技术水平、新颖性、工作原理和迄今为止报道的传感性能。
