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一种可能的机制,解释了高低压不可逆电穿孔脉冲的协同作用。

A Conceivable Mechanism Responsible for the Synergy of High and Low Voltage Irreversible Electroporation Pulses.

机构信息

College of Electrical Engineering, Chongqing University, Chongqing, 400030, China.

Department of Mechanical Engineering and Department of Bioengineering, University of California Berkeley, Berkeley, CA, 94720, USA.

出版信息

Ann Biomed Eng. 2019 Jul;47(7):1552-1563. doi: 10.1007/s10439-019-02258-5. Epub 2019 Apr 5.

DOI:10.1007/s10439-019-02258-5
PMID:30953220
Abstract

Irreversible electroporation (IRE), is a new non-thermal tissue ablation technology in which brief high electric field pulses are delivered across the target tissue to induce cell death by irreversible permeabilization of the cell membrane. A deficiency of conventional IRE is that the ablation zone is relatively small, bounded by the irreversible electroporation isoelectric field margin. In the previous studies we have introduced a new treatment protocol that combines few short high voltage (SHV) pulses with long low-voltage (LLV) pulses. In the previous studies, we also have shown that the addition of few SHV pulses increases by almost a factor of two the area ablated by a protocol that employs only the LLV pulses. This study employs potato and gel phantom to generate a plausible explanation for the mechanism. The study provides circumstantial evidence that the mechanism involved is the production of electrolytic compounds by the LLV pulse sequence, which causes tissue ablation beyond the margin of the irreversible electroporation isoelectric field generated by the SHV pulses, presumable to the reversible electroporation isoelectric field margin generated by the SHV pulses.

摘要

不可逆电穿孔(IRE)是一种新的非热组织消融技术,它通过在靶组织上施加短暂的高强度电场脉冲来诱导细胞膜不可逆穿孔,从而导致细胞死亡。传统 IRE 的一个缺点是消融区域相对较小,由不可逆电穿孔等电场边界限定。在之前的研究中,我们引入了一种新的治疗方案,该方案将几个短的高压(SHV)脉冲与长的低压(LLV)脉冲相结合。在之前的研究中,我们还表明,通过添加少数几个 SHV 脉冲,仅采用 LLV 脉冲的方案所消融的区域增加了近两倍。本研究利用土豆和凝胶模型来对此机制提供间接证据。该研究提供了间接证据,表明所涉及的机制是 LLV 脉冲序列产生的电解化合物,这些化合物导致组织消融超出了由 SHV 脉冲产生的不可逆电穿孔等电场边界,可能达到了由 SHV 脉冲产生的可逆电穿孔等电场边界。

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