Tian Cancan, Wang Fei, Wang Yunpeng, Yang Zhe, Chen Xuejiao, Mei Jingjing, Liu Hongzhen, Zhao Dongxu
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , 3888 Dongnanhu Road , Changchun 130021 , People's Republic of China.
University of Chinese Academy of Sciences , Beijing 100049 , People's Republic of China.
ACS Appl Mater Interfaces. 2019 May 1;11(17):15804-15812. doi: 10.1021/acsami.9b03551. Epub 2019 Apr 18.
Self-powered photodetectors (SPPDs) have attracted lots of attention due to their various advantages including no external power sources, high-sensitivity, fast response speed, and so on. This study reports the fabrication and characterization results of CsPbBr microcrystals (MCs) grown by chemical vapor deposition (CVD) method, and the SPPDs have been fabricated on the basis of the CsPbBr MCs layer with the sandwich structure of GaN/CsPbBr MCs/ZnO. Such designed SPPD shows the detectivity ( D*) of 10 Jones, on/off ratio of up to 10, peak responsivity ( R) of 89.5 mA/W, and enhanced stability at the incident wavelength of 540 nm. The photodetector enables the fast photoresponse speed of 100 μs rise time and 140 μs decay time. The performances of the SPPD are comparable to the best ones ever reported for CsPbBr based PDs but do not need external power supplies, which mainly benefit from the low trap density, long carrier diffusion of high quality CsPbBrMCs film, and the built-in electric fields in the sandwich structure of GaN/CsPbBr/ZnO layers.
自供电光电探测器（SPPDs）因其诸多优点，如无需外部电源、高灵敏度、快速响应速度等，而备受关注。本研究报道了通过化学气相沉积（CVD）法生长的CsPbBr微晶（MCs）的制备及表征结果，并基于具有GaN/CsPbBr MCs/ZnO三明治结构的CsPbBr MCs层制备了SPPDs。这种设计的SPPD在540 nm入射波长下，探测率（D*）为10 Jones，开/关比高达10，峰值响应度（R）为89.5 mA/W，且稳定性增强。该光电探测器的光响应速度快，上升时间为100 μs，衰减时间为140 μs。该SPPD的性能与以往报道的基于CsPbBr的光电探测器的最佳性能相当，但无需外部电源，这主要得益于高质量CsPbBr MCs薄膜的低陷阱密度、长载流子扩散以及GaN/CsPbBr/ZnO层三明治结构中的内建电场。
