Qi Dianyu, Han Cheng, Rong Ximing, Zhang Xiu-Wen, Chhowalla Manish, Wee Andrew T S, Zhang Wenjing
SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering , Shenzhen University , Shenzhen 518060 , China.
Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117551 , Singapore.
ACS Nano. 2019 Aug 27;13(8):9464-9472. doi: 10.1021/acsnano.9b04416. Epub 2019 Jul 24.
Semiconducting molybdenum ditelluride (2H-MoTe), a two-dimensional (2D) transition metal dichalcogenide, has attracted extensive research attention due to its favorable physical properties for future electronic devices, such as appropriate bandgap, ambipolar transport characteristic, and good chemical stability. The rational tuning of its electronic properties is a key point to achieve MoTe-based complementary electronic and optoelectronic devices. Herein, we demonstrate the dynamic and effective control of the electronic properties of few-layer MoTe, through the surface modification with aluminum (Al) adatoms, with a view toward high-performance complementary inverter devices. MoTe is found to be significantly electron doped by Al, exhibiting a continuous transport transition from pdominated ambipolar to ntype unipolar with enhanced electron mobility. Using a spatially controlled Al doping technique, both p and nchannels are established on a single MoTe nanosheet, which gives complementary inverters with a record-high gain of ∼195, which stands out in the 2D family of materials due to the balanced p and ntransport in Al-modified MoTe. Our studies coupled with the tunable nature of modification enable MoTe to be a promising candidate for high-performance complementary electronics.
半导体二碲化钼（2H-MoTe）是一种二维（2D）过渡金属二卤化物，因其对未来电子器件具有良好的物理性能，如合适的带隙、双极性传输特性和良好的化学稳定性，而受到广泛的研究关注。合理调节其电子性能是实现基于MoTe的互补型电子和光电器件的关键。在此，我们展示了通过用铝（Al）吸附原子进行表面改性，对少层MoTe的电子性能进行动态有效的控制，以期实现高性能互补型逆变器器件。发现MoTe被Al显著电子掺杂，表现出从以p为主的双极性到具有增强电子迁移率的n型单极性的连续传输转变。使用空间控制的Al掺杂技术，在单个MoTe纳米片上建立了p和n沟道，这使得互补型逆变器具有创纪录的约195的高增益，由于在Al改性的MoTe中p和n传输平衡，在二维材料家族中脱颖而出。我们的研究加上改性的可调性，使MoTe成为高性能互补电子学的有前途的候选材料。
