Kwon Yonghyun Albert, Park Su Bin, Kim Jaeyeon, Yoo Youngjae, Lee Seung Woo, Cho Jeong Ho
Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, Republic of Korea.
School of Chemical Engineering, Yeungnam University, Gyeongsan, Republic of Korea.
Nat Commun. 2025 Jul 22;16(1):6740. doi: 10.1038/s41467-025-62116-y.
This paper reports a reconfigurable binary-ternary transistor with a controllable voltage range and current level for the intermediate logic state. The proposed functions were demonstrated using an indium-gallium-zinc-oxide channel with a dual-gate structure incorporating two types of dielectrics (with high and low capacitances). This asymmetric dual-gate structure exhibits two key characteristics. First, the threshold voltage can be adjusted by applying a voltage to the control gate opposing the input. Second, partial depletion occurs when the input gate's capacitance is insufficient, making the off current dependent on the control gate voltage. Two dual-gated channels were connected in series, with inputs applied to the low-capacitance gate of one channel and the high-capacitance gate of the other and the remaining gates served as control gates. This device configuration outputs three current regions: fully depleted (low), partially depleted (intermediate), and accumulated (high) channel currents, which were utilized as logic states for the ternary device. Moreover, the threshold voltage for each channel and the current from the partially depleted channel could be precisely controlled by biasing each control gate. This enables an adjustable voltage range and current level for the intermediate logic state, as well as reconfigurability between binary and ternary operations.
本文报道了一种具有可控电压范围和中间逻辑状态电流水平的可重构二进制-三进制晶体管。所提出的功能通过具有双栅结构的铟镓锌氧化物沟道得以证明，该双栅结构包含两种类型的电介质（具有高电容和低电容）。这种不对称双栅结构具有两个关键特性。首先，可以通过向与输入相反的控制栅施加电压来调节阈值电压。其次，当输入栅的电容不足时会发生部分耗尽，使得关断电流取决于控制栅电压。两个双栅沟道串联连接，输入分别施加到一个沟道的低电容栅和另一个沟道的高电容栅，其余的栅用作控制栅。这种器件配置输出三个电流区域：完全耗尽（低）、部分耗尽（中间）和积累（高）沟道电流，这些被用作三进制器件的逻辑状态。此外，通过对每个控制栅施加偏置，可以精确控制每个沟道的阈值电压以及部分耗尽沟道的电流。这使得中间逻辑状态具有可调节的电压范围和电流水平，以及二进制和三进制操作之间的可重构性。
