Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
School of Electronics Engineering, VIT University, Vellore, India.
Sci Rep. 2017 Feb 10;7:42375. doi: 10.1038/srep42375.
The major issue of RRAM is the uneven sneak path that limits the array size. For the first time record large One-Resistor (1R) RRAM array of 128x128 is realized, and the array cells at the worst case still have good Low-/High-Resistive State (LRS/HRS) current difference of 378 nA/16 nA, even without using the selector device. This array has extremely low read current of 9.7 μA due to both low-current RRAM device and circuit interaction, where a novel and simple scheme of a reference point by half selected cell and a differential amplifier (DA) were implemented in the circuit design.
阻变存储器的主要问题是限制阵列尺寸的非均匀 sneak 路径。首次实现了大型 1R 阻变存储器阵列 128x128 的记录，即使没有使用选择器器件，最差情况下的阵列单元仍然具有良好的低/高电阻状态（LRS/HRS）电流差 378nA/16nA。由于低电流阻变存储器器件和电路相互作用，该阵列的读取电流极低，仅为 9.7μA，其中在电路设计中实现了通过半选择单元和差分放大器（DA）的参考点的新颖而简单的方案。
