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通过中性束溅射合成的铜掺杂氧化锌薄膜中的增强室温铁磁性和绿色光致发光。

Enhanced room temperature ferromagnetism and green photoluminescence in Cu doped ZnO thin film synthesised by neutral beam sputtering.

作者信息

Agarwal D C, Singh U B, Gupta Srashti, Singhal Rahul, Kulriya P K, Singh Fouran, Tripathi A, Singh Jitendra, Joshi U S, Avasthi D K

机构信息

Department of Physics, Sant Longowal Institute of Engineering & Technology, Longowal, Sangrur, Punjab, 148106, India.

Material Science, Inter-University Accelerator Centre, New Delhi, 110 067, India.

出版信息

Sci Rep. 2019 Apr 30;9(1):6675. doi: 10.1038/s41598-019-43184-9.

Abstract

The Cu (3 to 15 at%) is incorporated into ZnO thin film by atomic beam co-sputtering has been investigated for enhancement in room temperature ferromagnetism and green photo-luminance. These Cu-ZnO thin films examined with Raman spectroscopy, X-Ray Diffraction (XRD), UV-Visible spectroscopy, Hall measurement, magnetic force microscopy (MFM) and magnetic hysteresis. Raman spectroscopy, XRD confirms wurtzite structure and improvement in the crystallinity of ZnO upto 7% Cu. Further increase in Cu concentration results in growth in Cu nanoparticles. On increasing Cu concentration, there is decrement in transparency and increase in band gap with increase in n-type carrier concentration as confirmed from UV-Visible and Hall measurement studies. Magnetic measurement exhibited unique feature of room temperature ferromagnetic ordering in undoped and doped sample upto 3% Cu. The enhancement in magnetic moment as well as green emission in photoluminescence response with increase in Cu doping indicates that generation of large defects in ZnO by Cu doping, which can be attributed to combined effect of the presence of oxygen vacancies and/or structural inhomogeneity as well as formation of bound magnetic polarons. Importantly, synthesised Cu doped ZnO thin films can be used as spin LEDs and switchable spin-laser diodes.

摘要

通过原子束共溅射将铜(3至15原子百分比)掺入氧化锌薄膜中,已被研究用于增强室温铁磁性和绿色光致发光。这些铜掺杂氧化锌薄膜通过拉曼光谱、X射线衍射(XRD)、紫外可见光谱、霍尔测量、磁力显微镜(MFM)和磁滞回线进行了检测。拉曼光谱、XRD证实了纤锌矿结构以及氧化锌结晶度提高至7%铜。铜浓度进一步增加导致铜纳米颗粒生长。随着铜浓度增加,紫外可见和霍尔测量研究证实透明度降低且带隙增加,同时n型载流子浓度增加。磁性测量显示未掺杂和掺杂至3%铜的样品在室温下具有铁磁有序的独特特征。随着铜掺杂增加,磁矩增强以及光致发光响应中的绿色发射表明,铜掺杂在氧化锌中产生了大量缺陷,这可归因于氧空位的存在和/或结构不均匀性以及束缚磁极化子形成的综合效应。重要的是,合成的铜掺杂氧化锌薄膜可用于自旋发光二极管和可切换自旋激光二极管。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4f59/6491478/31af8b3d28ef/41598_2019_43184_Fig1_HTML.jpg

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