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锶钌氧化物的极高、强烈依赖温度的自旋霍尔电导率

Exceptionally High, Strongly Temperature Dependent, Spin Hall Conductivity of SrRuO.

作者信息

Ou Yongxi, Wang Zhe, Chang Celesta S, Nair Hari P, Paik Hanjong, Reynolds Neal, Ralph Daniel C, Muller David A, Schlom Darrell G, Buhrman Robert A

机构信息

School of Applied and Engineering Physics , Cornell University , Ithaca , New York 14853 , United States.

Department of Physics , Cornell University , Ithaca , New York 14853 , United States.

出版信息

Nano Lett. 2019 Jun 12;19(6):3663-3670. doi: 10.1021/acs.nanolett.9b00729. Epub 2019 May 8.

Abstract

Spin-orbit torques (SOT) in thin film heterostructures originate from strong spin-orbit interactions (SOI) that, in the bulk, generate a spin current due either to extrinsic spin-dependent, skew, or/and side-jump scattering or to intrinsic Berry curvature in the conduction bands. While most SOT studies have focused on materials with heavy metal components, the oxide perovskite SrRuO has been predicted to have a pronounced Berry curvature. Through quantification of its spin current by the SOT exerted on an adjacent Co ferromagnetic layer, we determine that SrRuO has a strongly temperature ( T)-dependent spin Hall conductivity σ , increasing with the electrical conductivity, consistent with expected behavior of the intrinsic effect in the "dirty metal" regime. σ is very high at low T, e.g., σ > (ℏ/2 e)3 × 10 Ω m at 60 K, and is largely unaffected by the SrRuO ferromagnetic transition at T ≈ 150 K, which agrees with a recent theoretical determination that the intrinsic spin Hall effect is magnetization independent. Below T smaller nonstandard SOT components also develop associated with the magnetism of the oxide. Our results are consistent with the degree of RuO octahedral tilt being correlated with the strength of the SOI in this complex oxide, as predicted by recent theoretical work on strontium iridate. These results establish SrRuO as a very promising candidate material for implementing strong spintronics functionalities in oxide electronics.

摘要

薄膜异质结构中的自旋轨道转矩(SOT)源自强自旋轨道相互作用(SOI),在体材料中,这种相互作用会由于外在的自旋相关、倾斜或/和侧跳散射,或者由于导带中的本征贝里曲率而产生自旋电流。虽然大多数SOT研究都集中在含有重金属成分的材料上,但据预测氧化物钙钛矿SrRuO具有显著的贝里曲率。通过对施加在相邻Co铁磁层上的SOT对其自旋电流进行量化,我们确定SrRuO具有强烈的温度(T)依赖性自旋霍尔电导率σ,随电导率增加,这与“脏金属” regime中本征效应的预期行为一致。在低温下σ非常高,例如,在60 K时σ >(ħ/2e)3×10 Ω m,并且在T≈150 K时基本不受SrRuO铁磁转变的影响,这与最近的理论测定结果一致,即本征自旋霍尔效应与磁化无关。在T以下,较小的非标准SOT分量也会与氧化物的磁性相关联地发展。我们的结果与RuO八面体倾斜程度与这种复杂氧化物中SOI强度相关这一情况一致,正如最近关于锶铱酸盐的理论研究所预测的那样。这些结果确立了SrRuO作为在氧化物电子学中实现强大自旋电子功能的非常有前景的候选材料。

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