Slesazeck Stefan, Mikolajick Thomas
NaMLab gGmbH, Noethnitzer Strasse 64 a, D-01187 Dresden, Germany.
Nanotechnology. 2019 Aug 30;30(35):352003. doi: 10.1088/1361-6528/ab2084. Epub 2019 May 9.
In this review the different concepts of nanoscale resistive switching memory devices are described and classified according to their I-V behaviour and the underlying physical switching mechanisms. By means of the most important representative devices, the current state of electrical performance characteristics is illuminated in-depth. Moreover, the ability of resistive switching devices to be integrated into state-of-the-art CMOS circuits under the additional consideration with a suitable selector device for memory array operation is assessed. From this analysis, and by factoring in the maturity of the different concepts, a ranking methodology for application of the nanoscale resistive switching memory devices in the memory landscape is derived. Finally, the suitability of the different device concepts for beyond pure memory applications, such as brain inspired and neuromorphic computational or logic in memory applications that strive to overcome the vanNeumann bottleneck, is discussed.
在本综述中，根据纳米级电阻式开关存储器件的I-V行为和潜在的物理开关机制，对其不同概念进行了描述和分类。借助最重要的代表性器件，深入阐述了其电性能特性的当前状态。此外，评估了电阻式开关器件在与用于存储器阵列操作的合适选择器器件一起额外考虑的情况下集成到最先进CMOS电路中的能力。基于此分析，并考虑到不同概念的成熟度，得出了纳米级电阻式开关存储器件在存储领域应用的排名方法。最后，讨论了不同器件概念对于超越纯存储应用的适用性，例如受大脑启发的、神经形态计算或旨在克服冯·诺依曼瓶颈的存储器内逻辑应用。
