Wang Zhuo, Qi Zhao, Liang Longfei, Qiao Ming, Li Zhaoji, Zhang Bo
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, Sichuan, China.
Nanoscale Res Lett. 2019 May 28;14(1):175. doi: 10.1186/s11671-019-3017-8.
A novel CMOS-process-compatible high-holding voltage silicon-controlled rectifier (HHV-SCR) for electrostatic discharge (ESD) protection is proposed and demonstrated by simulation and transmission line pulse (TLP) testing. The newly introduced hole (or electron) recombination region H-RR (or E-RR) not only recombines the minority carrier in parasitic PNP (or NPN) transistor base by N+ (or P+) layer, but provides the additional recombination to eliminate the surface avalanche carriers by newly added P+ (or N+) layer in H-RR (or E-RR), which brings about a further improvement of holding voltage (V). Compared with the measured V of 1.8 V of low-voltage triggered silicon-controlled rectifier (LVTSCR), the V of HHV-SCR can be increased to 8.1 V while maintaining a sufficiently high failure current (I > 2.6 A). An improvement of over four times in the figure of merit (FOM) is achieved.
本文提出了一种用于静电放电（ESD）保护的新型互补金属氧化物半导体（CMOS）工艺兼容型高保持电压可控硅整流器（HHV-SCR），并通过仿真和传输线脉冲（TLP）测试进行了验证。新引入的空穴（或电子）复合区H-RR（或E-RR）不仅通过N+（或P+）层复合寄生PNP（或NPN）晶体管基区中的少数载流子，还通过在H-RR（或E-RR）中新添加的P+（或N+）层提供额外的复合，以消除表面雪崩载流子，从而进一步提高保持电压（V）。与低压触发可控硅整流器（LVTSCR）测得的1.8 V保持电压相比，HHV-SCR的保持电压可提高到8.1 V，同时保持足够高的失效电流（I > 2.6 A）。品质因数（FOM）提高了四倍以上。
