Chen Ruibo, Wei Hao, Liu Hongxia, Hou Fei, Xiang Qi, Du Feibo, Yan Cong, Gao Tianzhi, Liu Zhiwei
Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China.
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610056, China.
Micromachines (Basel). 2023 Mar 10;14(3):632. doi: 10.3390/mi14030632.
In this work, a new low voltage-triggered silicon-controlled rectifier named MTSCR is realized in a 65 nm CMOS process for low voltage-integrated circuits electrostatic discharge (ESD) protections. The MTSCR incorporates an external NMOSs-string, which drives the internal NMOS (INMOS) of MTSCR to turn on, and then the INMOS drive SCR structure to turn on. Compared with the existing low trigger voltage (V) ESD component named diodes-string-triggered SCR (DTSCR), the MTSCR can realize the same low V characteristic but less area penalty of ~44.3% reduction. The results of the transmission line pulsing (TLP) measurement shows that the MTSCR possesses above 2.42 V holding voltage (V) and a low V of ~5.03 V, making it very suitable for the ESD protections for 1.8 V input/output (I/O) ports in CMOS technologies.
在这项工作中，一种名为MTSCR的新型低压触发可控硅整流器在65纳米互补金属氧化物半导体（CMOS）工艺中实现，用于低压集成电路的静电放电（ESD）保护。MTSCR包含一个外部NMOS串，它驱动MTSCR的内部NMOS（INMOS）导通，然后INMOS驱动可控硅整流器（SCR）结构导通。与现有的名为二极管串触发可控硅整流器（DTSCR）的低触发电压（Vt）ESD组件相比，MTSCR可以实现相同的低Vt特性，但面积惩罚减少约44.3%。传输线脉冲（TLP）测量结果表明，MTSCR具有高于2.42伏的保持电压（Vh）和约5.03伏的低Vt，使其非常适合用于CMOS技术中1.8伏输入/输出（I/O）端口的ESD保护。
