用于7纳米鳍式场效应晶体管工艺静电放电保护的嵌入式可控硅整流二极管。

Silicon-Controlled Rectifier Embedded Diode for 7 nm FinFET Process Electrostatic Discharge Protection.

作者信息

Zhu Xinyu, Dong Shurong, Yu Fangjun, Deng Feifan, Shubhakar Kalya, Pey Kin Leong, Luo Jikui

机构信息

Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 310027, China.

Engineering Product Development, Singapore University of Technology and Design, Singapore 138682, Singapore.

出版信息

Nanomaterials (Basel). 2022 May 19;12(10):1743. doi: 10.3390/nano12101743.

DOI:10.3390/nano12101743

PMID:35630965

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9143253/

Abstract

A new silicon-controlled rectifier embedded diode (SCR-D) for 7 nm bulk FinFET process electrostatic discharge (ESD) protection applications is proposed. The transmission line pulse (TLP) results show that the proposed device has a low turn-on voltage of 1.77 V. Compared with conventional SCR and diode string, the proposed SCR-D has an additional conduction path constituting by two additional inherent diodes, which results in a 1.8-to-2.2-times current surge capability as compared with the simple diode string and conventional SCR with the same size. The results show that the proposed device meets the 7 nm FinFET process ESD design window and has already been applied in actual circuits.

摘要

提出了一种用于7nm体硅鳍式场效应晶体管（FinFET）工艺静电放电（ESD）保护应用的新型可控硅整流器嵌入式二极管（SCR-D）。传输线脉冲（TLP）测试结果表明，该器件的开启电压低至1.77V。与传统的可控硅整流器和二极管串相比，所提出的SCR-D具有由两个额外的固有二极管构成的附加导电路径，与相同尺寸的简单二极管串和传统SCR相比，其浪涌电流能力提高了1.8至2.2倍。结果表明，该器件满足7nm FinFET工艺的ESD设计窗口要求，已应用于实际电路中。