Chang Chun-Rong, Dai Zih-Jyun, Lin Chun-Yu
Department of Electrical Engineering, National Taiwan Normal University, Taipei City 106, Taiwan.
Materials (Basel). 2023 Mar 23;16(7):2562. doi: 10.3390/ma16072562.
CMOS integrated circuits are vulnerable to electrostatic discharge (ESD); therefore, ESD protection circuits are needed. On-chip ESD protection is important for both component-level and system-level ESD protection. In this work, on-chip ESD protection circuits for multi-Gbps high-speed applications are studied. π-shaped ESD protection circuit structures realized by staked diodes with an embedded silicon-controlled rectifier (SCR) and resistor-triggered SCR are proposed. These test circuits are fabricated in CMOS technology, and the proposed designs have been proven to have better ESD robustness and performance in high-speed applications.
互补金属氧化物半导体集成电路易受静电放电（ESD）影响；因此，需要静电放电保护电路。片上静电放电保护对于组件级和系统级静电放电保护都很重要。在这项工作中，研究了用于多吉比特高速应用的片上静电放电保护电路。提出了通过堆叠二极管与嵌入式可控硅整流器（SCR）以及电阻触发可控硅实现的π形静电放电保护电路结构。这些测试电路采用互补金属氧化物半导体技术制造，并且所提出的设计已被证明在高速应用中具有更好的静电放电鲁棒性和性能。
