在c面蓝宝石和二氧化钛上外延生长的二氧化钒薄膜的结构和光电性能

Structural and Photoelectric Properties of Epitaxially Grown Vanadium Dioxide Thin Films on c-Plane Sapphire and Titanium Dioxide.

作者信息

Creeden Jason A, Madaras Scott E, Beringer Douglas B, Beebe Melissa R, Novikova Irina, Lukaszew R Ale

机构信息

William & Mary Department of Physics, Williamsburg, Virginia, 23187, USA.

出版信息

Sci Rep. 2019 Jun 27;9(1):9362. doi: 10.1038/s41598-019-45806-8.

DOI:10.1038/s41598-019-45806-8

PMID:31249373

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6597701/

Abstract

Vanadium dioxide (VO) is one of the most extensively studied materials in the strongly correlated electron family capable of sustaining an insulator-to-metal transition. Here we present our studies of high-quality thin films of epitaxially grown VO on c-AlO(0001) and TiO(001) via reactive DC pulsed magnetron sputtering. We present the structural transition probed via Reflection High Energy Electron Diffraction (RHEED) for the first time and we correlate the surface microstructure measurements with simulations before, during, and after the thermally induced transition. We also study the photoelectric conversion of VO on TiO(001) and c-AlO(0001) under 405 nm light and demonstrate up to a 2000% increase in quantum efficiency as the power of the light is varied for VO on TiO(001).

摘要

二氧化钒（VO₂）是强关联电子家族中研究最为广泛的材料之一，能够维持绝缘体到金属的转变。在此，我们展示了通过反应直流脉冲磁控溅射在c - Al₂O₃(0001)和TiO₂(001)上外延生长高质量VO₂薄膜的研究。我们首次展示了通过反射高能电子衍射（RHEED）探测到的结构转变，并将热诱导转变之前、期间和之后的表面微观结构测量结果与模拟结果相关联。我们还研究了405 nm光照射下VO₂在TiO₂(001)和c - Al₂O₃(0001)上的光电转换，并证明随着光照功率的变化，TiO₂(001)上的VO₂量子效率提高了2000%。