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通过脉冲磁场退火提高铁掺杂氧化锌薄膜的电阻开关稳定性

Improved Resistance Switching Stability in Fe-Doped ZnO Thin Films Through Pulsed Magnetic Field Annealing.

作者信息

Xu Hongtao, Wu Changjin, Xiahou Zhao, Jung Ranju, Li Ying, Liu Chunli

机构信息

Department of Physics and Oxide Research Center, Hankuk University of Foreign Studies, Yongin, 449-471, Korea.

Laboratory for Microstructures/School of Materials Science and Engineering, Shanghai University, 149 Yanchang Road, Shanghai, 200072, People's Republic of China.

出版信息

Nanoscale Res Lett. 2017 Dec;12(1):176. doi: 10.1186/s11671-017-1949-4. Epub 2017 Mar 9.

DOI:10.1186/s11671-017-1949-4
PMID:28282975
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5344868/
Abstract

Five percent of Fe-doped ZnO (ZnO:Fe) thin films were deposited on Pt/TiO/SiO/Si substrates by a spin-coating method. The films were annealed without (ZnO:Fe-0T) and with a pulsed magnetic field of 4 T (ZnO:Fe-4TP) to investigate the magnetic annealing effect on the resistance switching (RS) behavior of the Pt/ZnO:Fe/Pt structures. Compared with the ZnO:Fe-0T film, the ZnO:Fe-4TP film showed improved RS performance regarding the stability of the set voltage and the resistance of the high resistance state. Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the ZnO:Fe-4TP film contains more uniform grains and a higher density of oxygen vacancies, which promote the easier formation of conducting filaments along similar paths and the stability of switching parameters. These results suggest that external magnetic fields can be used to prepare magnetic oxide thin films with improved resistance switching performance for memory device applications.

摘要

通过旋涂法将5%的铁掺杂氧化锌（ZnO:Fe）薄膜沉积在Pt/TiO/SiO/Si衬底上。对薄膜进行无脉冲磁场（ZnO:Fe-0T）和4T脉冲磁场（ZnO:Fe-4TP）退火处理，以研究磁退火对Pt/ZnO:Fe/Pt结构电阻开关（RS）行为的影响。与ZnO:Fe-0T薄膜相比，ZnO:Fe-4TP薄膜在设定电压稳定性和高电阻状态电阻方面表现出更好的RS性能。透射电子显微镜和X射线光电子能谱分析表明，ZnO:Fe-4TP薄膜包含更均匀的晶粒和更高密度的氧空位，这促进了沿相似路径更容易形成导电细丝以及开关参数的稳定性。这些结果表明，外部磁场可用于制备具有改进电阻开关性能的磁性氧化物薄膜，用于存储器器件应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe0/5344868/b423717bf6da/11671_2017_1949_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe0/5344868/abab8bb6eef5/11671_2017_1949_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe0/5344868/945903a9cb0b/11671_2017_1949_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe0/5344868/83070cfeca12/11671_2017_1949_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe0/5344868/361bc754fb23/11671_2017_1949_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe0/5344868/ba5264a75b2a/11671_2017_1949_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe0/5344868/b423717bf6da/11671_2017_1949_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe0/5344868/abab8bb6eef5/11671_2017_1949_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe0/5344868/945903a9cb0b/11671_2017_1949_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe0/5344868/83070cfeca12/11671_2017_1949_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe0/5344868/361bc754fb23/11671_2017_1949_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe0/5344868/ba5264a75b2a/11671_2017_1949_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe0/5344868/b423717bf6da/11671_2017_1949_Fig6_HTML.jpg

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2
A New Theoretical Insight Into ZnO NWs Memristive Behavior.氧化锌纳米线忆阻行为的新理论见解。
Nano Lett. 2016 Apr 13;16(4):2543-7. doi: 10.1021/acs.nanolett.6b00085. Epub 2016 Mar 2.
3
Memristive devices for computing.忆阻器计算设备。
Nat Nanotechnol. 2013 Jan;8(1):13-24. doi: 10.1038/nnano.2012.240.
4
Resistive switching and magnetic modulation in cobalt-doped ZnO.钴掺杂氧化锌中的电阻开关和磁调制。
Adv Mater. 2012 Jul 10;24(26):3515-20. doi: 10.1002/adma.201201595. Epub 2012 Jun 8.
5
Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM.基于氧化物电解质的阻变存储器中导电丝的动态生长/溶解的实时观察。
Adv Mater. 2012 Apr 10;24(14):1844-9. doi: 10.1002/adma.201104104. Epub 2012 Mar 7.
6
Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments.通过削弱 Cu 细丝的形成/断裂的随机性来改善 Cu/ZnO/Pt 三明治的电阻开关性能。
Nanotechnology. 2011 Jul 8;22(27):275204. doi: 10.1088/0957-4484/22/27/275204. Epub 2011 May 25.
7
Fabricating Co doped ZnO nanocrystallines by hydrothermal method with high pulsed magnetic field.利用高脉冲磁场通过水热法制备钴掺杂氧化锌纳米晶体。
J Nanosci Nanotechnol. 2010 Nov;10(11):7303-6. doi: 10.1166/jnn.2010.2872.
8
Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode.采用金属纳米晶覆盖底电极在基于固态电解质的 ReRAM 中可控生长纳米级导电丝。
ACS Nano. 2010 Oct 26;4(10):6162-8. doi: 10.1021/nn1017582.
9
Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.用于超高速和高密度存储应用的全室温制造的非易失性电阻式存储器。
Nano Lett. 2009 Apr;9(4):1636-43. doi: 10.1021/nl900006g.
10
Memristive switching mechanism for metal/oxide/metal nanodevices.金属/氧化物/金属纳米器件的忆阻开关机制
Nat Nanotechnol. 2008 Jul;3(7):429-33. doi: 10.1038/nnano.2008.160. Epub 2008 Jun 15.