Shen Zongjie, Qi Yanfei, Mitrovic Ivona Z, Zhao Cezhou, Hall Steve, Yang Li, Luo Tian, Huang Yanbo, Zhao Chun
Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China.
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK.
Micromachines (Basel). 2019 Jul 2;10(7):446. doi: 10.3390/mi10070446.
Resistive random access memory (RRAM) devices with Ni/AlO/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlO) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments of 25 °C. The devices displayed typical bipolar resistive switching characteristics. Investigations were carried out on the effect of different annealing temperatures for associated RRAM devices to show that performance was correlated with changes of hydroxyl group concentration in the AlO thin films. The annealing temperature of 250 °C was found to be optimal for the dielectric layer, exhibiting superior performance of the RRAM devices with the lowest operation voltage (<1.5 V), the highest ON/OFF ratio (>10), the narrowest resistance distribution, the longest retention time (>10 s) and the most endurance cycles (>150).
通过沉积基于溶液的氧化铝（Al₂O₃）介电层来制造具有Ni/Al₂O₃/Pt结构的电阻式随机存取存储器（RRAM）器件，随后在200℃至300℃的温度范围内以25℃的增量进行退火。这些器件表现出典型的双极电阻开关特性。对相关RRAM器件的不同退火温度的影响进行了研究，结果表明性能与Al₂O₃薄膜中羟基浓度的变化相关。发现250℃的退火温度对于介电层是最佳的，该温度下RRAM器件表现出优异的性能，具有最低的工作电压（<1.5 V）、最高的开/关比（>10）、最窄的电阻分布、最长的保持时间（>10⁴ s）和最多的耐久性循环（>150）。
