Wu Lei, Liu Hongxia, Lin Jinfu, Wang Shulong
Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China.
Nanomaterials (Basel). 2020 Mar 4;10(3):457. doi: 10.3390/nano10030457.
A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfO/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the switching ratio and uniformity improved. Tests on the device's cycling endurance and data retention characteristics found that the device had over 1000 erase/write endurance and over 10 s of lifetime (85 °C). The switching mechanisms of the devices before and after annealing were also discussed.
通过对Pt/HfO/Ti结构进行热退火实现的一种自顺应电阻式随机存取存储器（RRAM）。电学特性测量表明，在500°C退火的器件的形成电压降低，开关比和均匀性得到改善。对器件的循环耐久性和数据保持特性进行测试发现，该器件具有超过1000次擦除/写入耐久性和超过10秒的寿命（85°C）。还讨论了退火前后器件的开关机制。
