Yuan Xinyue, Emmenegger Vishalini, Obien Marie Engelene J, Hierlemann Andreas, Frey Urs
Department Biosystems Science and Engineering, ETH Zurich, Basel, Switzerland.
MaxWell Biosystems AG, Basel, Switzerland.
IEEE Biomed Circuits Syst Conf. 2019 Jun 18;2018. doi: 10.1109/BIOCAS.2018.8584735.
In recent electrophysiological studies, CMOS-based high-density microelectrode arrays (HD-MEA) have been widely used for studies of both and neuronal signals and network behavior. Yet, an open issue in MEA design concerns the tradeoff between signal-to-noise ratio (SNR) and number of readout channels. Here we present a new HD-MEA design in 0.18 μm CMOS technology, consisting of 19,584 electrodes at a pitch of 18.0 μm. By combing two readout structures, namely active-pixel-sensor (APS) and switch-matrix (SM) on a single chip, the dual-mode HD-MEA is capable of recording simultaneously from the entire array and achieving high signal-to-noise-ratio recordings on a subset of electrodes. The APS readout circuits feature a noise level of 10.9 μV for the action potential band (300 Hz - 5 kHz), while the noise level for the switch-matrix readout is 3.1 μV.
在最近的电生理研究中，基于互补金属氧化物半导体（CMOS）的高密度微电极阵列（HD-MEA）已被广泛用于神经元信号和网络行为的研究。然而，MEA设计中的一个未解决问题涉及信噪比（SNR）和读出通道数量之间的权衡。在此，我们展示了一种采用0.18μm CMOS技术的新型HD-MEA设计，其由间距为18.0μm的19,584个电极组成。通过在单个芯片上结合两种读出结构，即有源像素传感器（APS）和开关矩阵（SM），这种双模HD-MEA能够从整个阵列同时进行记录，并在一部分电极上实现高信噪比记录。APS读出电路在动作电位频段（300Hz - 5kHz）的噪声水平为10.9μV，而开关矩阵读出的噪声水平为3.1μV。
