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用于哺乳动物神经元细胞内记录/刺激的具有4096个电流钳/电压钳放大器的CMOS纳米电极阵列设计

The Design of a CMOS Nanoelectrode Array with 4096 Current-Clamp/Voltage-Clamp Amplifiers for Intracellular Recording/Stimulation of Mammalian Neurons.

作者信息

Abbott Jeffrey, Ye Tianyang, Krenek Keith, Qin Ling, Kim Youbin, Wu Wenxuan, Gertner Rona S, Park Hongkun, Ham Donhee

机构信息

John A. Paulson School of Engineering and Applied Sciences, the Department of Chemistry and Chemical Biology, and the Department of Physics, Harvard University, Cambridge, MA 02138, USA.

John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA.

出版信息

IEEE J Solid-State Circuits. 2020 Sep;55(9):2567-2582. doi: 10.1109/jssc.2020.3005816. Epub 2020 Jul 9.

Abstract

CMOS microelectrode arrays (MEAs) can record electrophysiological activities of a large number of neurons in parallel but only extracellularly with low signal-to-noise ratio. Patch clamp electrodes can perform intracellular recording with high signal-to-noise ratio but only from a few neurons in parallel. Recently we have developed and reported a neuroelectronic interface that combines the parallelism of the CMOS MEA and the intracellular sensitivity of the patch clamp. Here, we report the design and characterization of the CMOS integrated circuit (IC), a critical component of the neuroelectronic interface. Fabricated in 0.18-m technology, the IC features an array of 4,096 platinum black (PtB) nanoelectrodes spaced at a 20 m pitch on its surface and contains 4,096 active pixel circuits. Each active pixel circuit, consisting of a new switched-capacitor current injector--capable of injecting from ±15 pA to ±0.7 A with a 5 pA resolution--and an operational amplifier, is highly configurable. When configured into current-clamp mode, the pixel intracellularly records membrane potentials including subthreshold activities with ∼23 V input referred noise while injecting a current for simultaneous stimulation. When configured into voltage-clamp mode, the pixel becomes a switched-capacitor transimpedance amplifier with ∼1 pA input referred noise, and intracellularly records ion channel currents while applying a voltage for simultaneous stimulation. Such voltage/current-clamp intracellular recording/stimulation is a feat only previously possible with the patch clamp method. At the same time, as an array, the IC overcomes the lack of parallelism of the patch clamp method, measuring thousands of mammalian neurons in parallel, with full-frame intracellular recording/stimulation at 9.4 kHz.

摘要

互补金属氧化物半导体微电极阵列(CMOS-MEA)可以并行记录大量神经元的电生理活动,但只能进行细胞外记录,信噪比很低。膜片钳电极可以进行细胞内记录,信噪比高,但只能并行记录少数神经元的活动。最近,我们开发并报道了一种神经电子接口,它结合了CMOS-MEA的并行性和膜片钳的细胞内灵敏度。在此,我们报告神经电子接口的关键组件——CMOS集成电路(IC)的设计和特性。该IC采用0.18微米工艺制造,其表面有一个由4096个铂黑(PtB)纳米电极组成的阵列,电极间距为20微米,包含4096个有源像素电路。每个有源像素电路由一个新型开关电容电流注入器(能够以5皮安的分辨率注入±15皮安至±0.7微安的电流)和一个运算放大器组成,具有高度的可配置性。当配置为电流钳模式时,该像素可以在细胞内记录膜电位,包括阈下活动,输入参考噪声约为23微伏,同时注入电流进行同步刺激。当配置为电压钳模式时,该像素变成一个开关电容跨阻放大器,输入参考噪声约为1皮安,在细胞内记录离子通道电流的同时施加电压进行同步刺激。这种电压/电流钳细胞内记录/刺激是以前只有膜片钳方法才能实现的壮举。同时,作为一个阵列,该IC克服了膜片钳方法缺乏并行性的问题,能够并行测量数千个哺乳动物神经元,全帧细胞内记录/刺激频率为9.4千赫。

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