Chen Lin, Xu Wangying, Liu Wenjun, Han Shun, Cao Peijiang, Fang Ming, Zhu Deliang, Lu Youming
College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials , Shenzhen University , Shenzhen 518060 , China.
ACS Appl Mater Interfaces. 2019 Aug 14;11(32):29078-29085. doi: 10.1021/acsami.9b10888. Epub 2019 Aug 2.
We report the fabrication of gallium oxide (GaO) thin films by a novel polymer-assisted deposition (PAD) method. The influence and mechanism of postannealing temperature (200-800 °C) on the formation and properties of GaO thin films are investigated by complementary characterization analyses. The results indicate that solution-deposited GaO experiences the elimination of organic residuals as well as the transformation of amorphous GaO to crystalline GaO with the increase in annealing temperature. High-quality GaO could be achieved with a smooth surface, wide band gap, and decent dielectric performance. Moreover, the solution-processed InO thin-film transistors based on optimized GaO dielectrics demonstrate outstanding electrical performance, including a low operating voltage of 5 V, a mobility of 3.09 cm V s, an on/off current ratio of 1.8 × 10, and a subthreshold swing of 0.18 V dec. Our study suggests that GaO achieved by PAD shows great potential for further low-cost and high-performance optoelectronic applications.
我们报道了通过一种新型的聚合物辅助沉积（PAD）方法制备氧化镓（GaO）薄膜。通过互补的表征分析研究了退火温度（200 - 800°C）对GaO薄膜形成和性能的影响及机制。结果表明，随着退火温度的升高，溶液沉积的GaO经历了有机残余物的消除以及非晶GaO向结晶GaO的转变。可以获得具有光滑表面、宽带隙和良好介电性能的高质量GaO。此外，基于优化的GaO电介质的溶液处理InO薄膜晶体管表现出出色的电学性能，包括5 V的低工作电压、3.09 cm² V⁻¹ s⁻¹的迁移率、1.8×10⁷的开/关电流比以及0.18 V dec⁻¹的亚阈值摆幅。我们的研究表明，通过PAD制备的GaO在进一步的低成本和高性能光电子应用中具有巨大潜力。
