Xu Wangying, Xu Chuyu, Hong Liping, Xu Fang, Zhao Chun, Zhang Yu, Fang Ming, Han Shun, Cao Peijiang, Lu Youming, Liu Wenjun, Zhu Deliang
College of Materials Science and Engineering, Shenzhen University, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen 518000, China.
Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Advanced Material Diagnostic Technology, and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, China.
Nanomaterials (Basel). 2022 Apr 5;12(7):1216. doi: 10.3390/nano12071216.
We demonstrate the growth of ultra-thin (~5 nm) indium ytterbium oxide (In-Yb-O) thin film using a simple vacuum-free aqueous solution approach for the first time. The influences of Yb addition on the microstructural, chemical, optical, and electrical properties of InO are well investigated. The analyses indicate that Yb dopant could suppress oxygen vacancy defects effectively owing to the lower standard electrode potential, lower electronegativity, and stronger metal-oxide bond strength than that of In. The optimized In-Yb-O thin-film transistors (TFTs) exhibit excellent electrical performance (mobility of 8 cm/Vs and on/off ratio of ~10) and enhanced stability. The triumph of In-Yb-O TFTs is owing to the high quality InO matrix, the remarkable suppressor of Yb, and the nanometer-thin and atomically smooth nature (RMS: ~0.26 nm) of channel layer. Therefore, the eco-friendly water-induced ultra-thin In-Yb-O channel provides an excellent opportunity for future large-scale and cost-effective electronic applications.
我们首次使用一种简单的无真空水溶液方法展示了超薄（约5纳米）氧化铟镱（In-Yb-O）薄膜的生长。深入研究了镱的添加对氧化铟（InO）的微观结构、化学、光学和电学性质的影响。分析表明，由于镱的标准电极电位较低、电负性较低且金属-氧化物键强度比铟更强，镱掺杂剂能够有效抑制氧空位缺陷。优化后的In-Yb-O薄膜晶体管（TFT）表现出优异的电学性能（迁移率为8 cm²/V·s，开/关比约为10）和增强的稳定性。In-Yb-O TFT的成功归因于高质量的InO基体、显著的镱抑制作用以及沟道层的纳米级薄且原子级光滑的特性（均方根粗糙度：约0.26纳米）。因此，这种环保的水诱导超薄In-Yb-O沟道为未来大规模且具有成本效益的电子应用提供了绝佳机会。
