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由无抗衡阴离子金属-聚合物络合物实现的高性能氧化铟锡(ITO)电极。

High-Performance Indium-Tin Oxide (ITO) Electrode Enabled by a Counteranion-Free Metal-Polymer Complex.

作者信息

Park Gyeongbae, Kim Dongbeom, Kim Geonwoo, Jeong Unyong

机构信息

Department of Materials Science and Engineering, Pohang University of Science and Technology, 77, Choengam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, Republic of Korea.

出版信息

ACS Nanosci Au. 2022 Aug 31;2(6):527-538. doi: 10.1021/acsnanoscienceau.2c00027. eCollection 2022 Dec 21.

Abstract

Although multicomponent inorganic thin films (metal-oxides, -carbides, -nitrides, and -chalcogenides) have been synthesized by polymer-assisted deposition (PAD), synthesis of high-performance transparent conducting oxides (TCOs) has been rarely reported. TCO requires (i) removal of impurities, (ii) high-density oxide film, (iii) homogeneity in crystal structures and film morphology, and (iv) controllable elemental doping. This study performs a systematic investigation on preparation of stable multicomponent metal-polymer complex solutions by removing the counteranions in the solution. This study also proposes accurate acid-base titration for each metal species in order to minimize the amount of PEI, thus maximizing the density of the film. As a representative TCO, Sn-doped InO (ITO) films have been achieved. The ITO film has an excellent sheet resistance (24.5 Ω/sq) at 93% optical transparency, with a figure of merit of 2.1 × 10 Ω, which is comparable to the best.

摘要

尽管通过聚合物辅助沉积(PAD)已合成了多组分无机薄膜(金属氧化物、碳化物、氮化物和硫族化物),但高性能透明导电氧化物(TCO)的合成却鲜有报道。TCO要求(i)去除杂质,(ii)形成高密度氧化膜,(iii)晶体结构和薄膜形态具有均匀性,以及(iv)可控制的元素掺杂。本研究通过去除溶液中的抗衡阴离子,对稳定的多组分金属 - 聚合物复合溶液的制备进行了系统研究。本研究还针对每种金属物种提出了精确的酸碱滴定法,以尽量减少聚乙烯亚胺(PEI)的用量,从而使薄膜密度最大化。作为一种代表性的TCO,已制备出掺锡氧化铟(ITO)薄膜。该ITO薄膜在93%的光学透明度下具有出色的方阻(24.5 Ω/sq),品质因数为2.1×10 Ω,与最佳性能相当。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5629/10125366/93dca5fd6ee7/ng2c00027_0002.jpg

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