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扩散忆阻器紧凑模型在神经形态电路中的应用

On the Application of a Diffusive Memristor Compact Model to Neuromorphic Circuits.

作者信息

Cisternas Ferri Agustín, Rapoport Alan, Fierens Pablo I, Patterson German A, Miranda Enrique, Suñé Jordi

机构信息

Departamento de Física, FCEyN, UBA, Pabellón 1, Ciudad Universitaria, Buenos Aires 1428, Argentina.

Instituto Tecnológico de Buenos Aires, and National Scientific and Technical Research Council (CONICET), Buenos Aires 1437, Argentina.

出版信息

Materials (Basel). 2019 Jul 13;12(14):2260. doi: 10.3390/ma12142260.

DOI:10.3390/ma12142260
PMID:31337071
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6678620/
Abstract

Memristive devices have found application in both random access memory and neuromorphic circuits. In particular, it is known that their behavior resembles that of neuronal synapses. However, it is not simple to come by samples of memristors and adjusting their parameters to change their response requires a laborious fabrication process. Moreover, sample to sample variability makes experimentation with memristor-based synapses even harder. The usual alternatives are to either simulate or emulate the memristive systems under study. Both methodologies require the use of accurate modeling equations. In this paper, we present a diffusive compact model of memristive behavior that has already been experimentally validated. Furthermore, we implement an emulation architecture that enables us to freely explore the synapse-like characteristics of memristors. The main advantage of emulation over simulation is that the former allows us to work with real-world circuits. Our results can give some insight into the desirable characteristics of the memristors for neuromorphic applications.

摘要

忆阻器件已在随机存取存储器和神经形态电路中得到应用。特别是，已知它们的行为类似于神经元突触。然而，获得忆阻器样本并不容易，并且调整其参数以改变其响应需要繁琐的制造过程。此外，样本之间的变异性使得基于忆阻器的突触实验更加困难。通常的替代方法是模拟或仿真所研究的忆阻系统。这两种方法都需要使用精确的建模方程。在本文中，我们提出了一种忆阻行为的扩散紧凑模型，该模型已经过实验验证。此外，我们实现了一种仿真架构，使我们能够自由探索忆阻器的类突触特性。仿真相对于模拟的主要优点是前者允许我们使用实际电路。我们的结果可以为神经形态应用中忆阻器的理想特性提供一些见解。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cbb/6678620/c2ef4b6436e0/materials-12-02260-g014.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cbb/6678620/80d79a84f7ae/materials-12-02260-g008.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cbb/6678620/68194c732095/materials-12-02260-g010.jpg
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引用本文的文献

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本文引用的文献

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Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges.基于氧化还原的电阻式开关存储器——纳米离子机制、前景与挑战
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