National Key Laboratory on Electromagnetic Environment Effects, Shijiazhuang Campus, Army Engineering University, Shijiazhuang 050003, China.
School of Information Science and Engineering, Hebei University of Science and Technology, Shijiazhuang 050018, China.
Sensors (Basel). 2022 Aug 3;22(15):5785. doi: 10.3390/s22155785.
As two-terminal passive fundamental circuit elements with memory characteristics, memristors are promising devices for applications such as neuromorphic systems, in-memory computing, and tunable RF/microwave circuits. The increasingly complex electromagnetic interference (EMI) environment threatens the reliability of memristor systems. However, various EMI signals' effects on memristors are still unclear. This paper selects continuous waves (CWs) as EMI signals. It provides a deeper insight into the interference effect of CWs on the memristor driven by a sinusoidal excitation voltage, as well as a method for investigating the EMI effect of memristors. The optimal memristor model is obtained by the exhaustive traversing of the possible model parameters, and the interference effect of CWs on memristors is quantified based on this model and the proposed evaluation metrics. Simulation results indicate that CW interference may affect the switching time, dynamic range, nonlinearity, symmetry, time to the boundary, and variation of memristance. The specific interference effect depends on the operating mode of the memristor, the amplitude, and the frequency of the CW. This research provides a foundation for evaluating EMI effects and designing electromagnetic protection for memristive neuromorphic systems.
作为具有记忆特性的两端无源基本电路元件，忆阻器在神经形态系统、内存计算和可调射频/微波电路等应用中具有广阔的应用前景。日益复杂的电磁干扰（EMI）环境威胁着忆阻器系统的可靠性。然而，各种 EMI 信号对忆阻器的影响尚不清楚。本文选择连续波（CW）作为 EMI 信号，深入研究了 CW 对正弦激励电压驱动的忆阻器的干扰效应，以及研究忆阻器 EMI 效应的方法。通过对可能的模型参数进行穷举遍历，得到了最优的忆阻器模型，并基于该模型和提出的评估指标，量化了 CW 对忆阻器的干扰效应。仿真结果表明，CW 干扰可能会影响忆阻器的开关时间、动态范围、非线性、对称性、到达边界的时间和电阻变化。具体的干扰效应取决于忆阻器的工作模式、CW 的幅度和频率。这项研究为评估 EMI 效应和设计用于忆阻神经形态系统的电磁保护提供了基础。
