Huff Taleana R, Dienel Thomas, Rashidi Mohammad, Achal Roshan, Livadaru Lucian, Croshaw Jeremiah, Wolkow Robert A
Department of Physics , University of Alberta , Edmonton , Alberta T6G 2J1 , Canada.
Quantum Silicon, Inc. , Edmonton , Alberta T6G 2M9 , Canada.
ACS Nano. 2019 Sep 24;13(9):10566-10575. doi: 10.1021/acsnano.9b04653. Epub 2019 Aug 9.
With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here, we characterize the influence of charged atomic species on the electrostatic potential of a semiconductor surface at the subnanometer scale. Using noncontact atomic force microscopy, two-dimensional maps of the contact potential difference are used to show the spatially varying electrostatic potential on the (100) surface of hydrogen-terminated highly doped silicon. Three types of charged species, one on the surface and two within the bulk, are examined. An electric field sensitive spectroscopic signature of a single probe atom reports on nearby charged species. The identity of one of the near-surface species has been uncertain in the literature, and we suggest that its character is more consistent with either a negatively charged interstitial hydrogen or a hydrogen vacancy complex.
随着纳米电子学接近原子尺寸器件的极限，研究局部环境中的不规则性如何影响器件功能变得至关重要。在此，我们在亚纳米尺度上表征了带电原子种类对半导体表面静电势的影响。利用非接触原子力显微镜，通过接触电势差的二维图展示了氢终止的高掺杂硅（100）表面上空间变化的静电势。研究了三种带电种类，一种在表面，两种在体相中。单个探针原子的电场敏感光谱特征揭示了附近的带电种类。文献中近表面种类之一的身份尚不确定，我们认为其特征更符合带负电的间隙氢或氢空位复合体。
